HITACHI 2SC2471

2SC2471
Silicon NPN Epitaxial
Application
• UHF Amplifier
• UHF TV Tuner, Local oscillator
Outline
TO-92 (2)
1. Base
2. Emitter
3. Collector
3
2
1
2SC2471
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
310
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
30
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
100
nA
VCB = 24 V, IE = 0
Emitter cutoff current
I EBO
—
—
100
nA
VEB = 2 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
300
mV
I C = 10 mA, IB = 5 mA
Base to emitter voltage
VBE
—
—
0.95
V
VCE = 10 V, IC = 5 mA
DC current transfer ratio
hFE
20
—
—
Gain bandwidth product
fT
1000
2000
—
MHz
VCE = 10 V, IC = 5 mA
Collector output capacitance
Cob
—
0.9
1.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Base time constant
rbb’
—
12
20
ps
VCB = 10 V, IC = 5 mA,
f = 31.8 MHz
2
•
CC
VCE = 10 V, IC = 5 mA
2SC2471
DC Current Transfer Ratio vs.
Collector Current
100
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
400
300
200
100
VCE = 10 V
80
60
40
20
0
1
50
100
150
Ambient Temperature Ta (°C)
0
VCE = 10 V
2,000
1,500
1,000
500
0
50
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
2,500
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1
2
5
10
20
Collector Current IC (mA)
5
f = 1 MHz
IE = 0
2
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC2471
Base Time Constant vs.Collector Current
Input Admittance vs. Frequency
100
50
VCB = 10 V
f = 31.8 MHz
40
Input Admittance yib (mS)
Best Time Constant rbb'•CC (ps)
50
30
20
10
bib
VCB = 10 V
IC = 5 mA
Common Base
yib = gib + jbib
20
10
5
2
1.0
0.5
0.2
4
8
12
16
Collector Current IC (mA)
0
0.1
100
20
200
500
Frequency f (MHz)
20
Forward Transfer Admittance yfb (mS)
Output Admittance yob (mS)
100
50
VCB = 10 V
IC = 5 mA
Common Base
yob = gob + jbob
10
5
bob
2
1.0
0.5
gob
0.2
0.1
100
200
500
Frequency f (MHz)
1,000
Forward Transfer Admittance vs.
Frequency
Output Admittance vs. Frequency
4
gib
1,000
100
80
60
40
20
VCB = 10 V
IC = 5 mA
Common Base
yfb = gfb + jbfb
0
bfb
gfb
–20
–40
–60
–80
–100
100
200
500
Frequency f (MHz)
1,000
2SC2471
Reverse Transfer Admittance yrb (mS)
Reverse Transfer Admittance vs.
Frequency
4
2
0
VCB = 10 V
IC = 5 mA
Common Base
yrb = grb + jbrb
grb
brb
–2
–4
–6
100
200
500
Frequency f (MHz)
1,000
5
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.