HITACHI 2SC2736

2SC2736
Silicon NPN Epitaxial
Application
• UHF/VHF frequency converter
• Local oscillator
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC2736
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
500
nA
VCB = 15 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.7
V
I C = 10 mA, IB = 5 mA
DC current transfer ratio
hFE
30
—
200
Collector output capacitance
Cob
—
—
1.0
pF
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
1400
2200
—
MHz
VCE = 10 V, IC = 5 mA
Conversion gain
CG1
—
22.5
—
dB
VCC = 12 V, IC = 2 mA,
f = 200 MHz,
f OSC = 230 MHz (0dBm)
CG2
—
10
—
dB
VCC = 12 V, IC = 2 mA,
f = 900 MHz,
f OSC = 930 MHz (0dBm),
f Out = 30 MHz
Noise figure
NF
—
4.0
—
dB
VCC = 12 V, IC = 2 mA,
f = 200 MHz,
f OSC = 230 MHz (0dBm)
Oscillating output voltage
VOSC1
—
300
—
mV
VCC = 12 V, IC = 7 mA,
f OSC = 300 MHz
VOSC2
—
200
—
mV
VCC = 12 V, IC = 7 mA,
f OSC = 930 MHz
Note: Marking is “TC”.
2
VCE = 10 V, IC = 5 mA
2SC2736
DC Current Transfer Ratio vs.
Collector Current
100
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
VCE = 10 V
80
60
40
20
0
1
100
150
50
Ambient Temperature Ta (°C)
0
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
5,000
VCE = 10 V
3,000
2,000
1,000
0
1
10
20
2
5
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
4,000
10
20
2
5
Collector Current IC (mA)
50
1.0
f = 1 MHz
IE = 0
0.8
0.6
0.4
0.2
0
1
10
20
50
2
5
Collector to Base Voltage VCB (V)
3
2SC2736
Base Time Constant vs.
Collector Current
1.0
20
Base Time Constant rbb' CC (ps)
f = 1 MHz
Emitter Common
0.8
0.6
0.4
0.2
4
25
CG
20
16
15
12
8
NF
VCC = 12 V
f = 200 MHz
fosc = 230 MHz
(0 dBm)
fout = 30 MHz
6
8
2
4
Collector Current IC (mA)
4
0
10
Conversion Gain CG (dB)
20
10
4
8
12
16
Collector Current IC (mA)
20
Conversion Gain, Noise Figure vs.
Oscillating Injection Voltage
Noise Figure NF (dB)
Conversion Gain CG (dB)
25
4
8
0
10
20
50
2
5
Collector to Base Voltage VCB (V)
Conversion Gain, Noise Figure vs.
Collector Current
0
12
0
1
5
VCB = 10 V
f = 31.8 MHz
16
20
20
CG
15
10
10
5
VCC = 12 V
IC = 2 mA
f = 200 MHz
fosc = 230 MHz
fout = 30 MHz
NF
0
–8
–4
–20
–16
–12
0
Oscillating Injection Voltage Vosc (dBm)
Noise Figure NF (dB)
Reverse Transfer Capacitance Cre (pF)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
2SC2736
Conversion Gain vs.
Collector Current
Oscillating Output Voltage vs.
Collector Current
Oscillating Output Voltage Vosc1 (mV)
Conversion Gain CG (dB)
20
VCC = 12 V
f = 900 MHz
fosc = 930 MHz
(0dBm)
fout = 30 MHz
16
12
8
4
6
8
2
4
Collector Current IC (mA)
0
10
500
400
300
200
100
0
500
400
20
500
VCC = 12 V
fosc = 930 MHz
300
200
100
0
12
16
4
8
Collector Current IC (mA)
Oscillating Output Voltage vs.
Supply Voltage
Oscillating Output Voltage Vosc (mV)
Oscillating Output Voltage Vosc2 (mV)
Oscillating Output Voltage vs.
Collector Current
VCC = 12 V
fosc = 300 MHz
12
16
4
8
Collector Current IC (mA)
20
IC = 7 mA
400
fosc = 300 MHz
300
200
fosc = 900 MHz
100
0
12
16
4
8
Supply Voltage VCC (V)
20
5
2SC2736
VHF Conversion Gain (CG1) : Noise Figure Test Circuit
fosc = 230 MHz
(0 dBm)
2,200 p
VCC
1.5 p
560
f = 200 MHz
Ferrite Bead
L2 56 p
L4
27 p
fout = 30 MHz
RL = 50 Ω
D.U.T.
L1
4.2 p
330
L3
18 p
2,200 p
2,200 p
VBB
6
L1 : φ0.5 mm Enameled Copper Wire
4 Turns inside dia φ5 mm
L2 : φ0.5 mm Enameled Copper Wire
4 Turns inside dia φ4 mm
L3 : φ0.2 mm Enameled Copper Wire
6 Turns inside dia φ3 mm
L4 : Outside dia φ5 mm Bobbin,
φ0.2 mm Enameled Copper Wire
16 Turns Using Ferrite bead.
80 p
Unit C : F
R:Ω
2SC2736
UHF Conversion Gain (CG2) Test Circuit
VBB
1k
C3
C2
fosc = 930 MHz
(0 dBm)
200 µ
L4
L5
L6
80 p
L3
L1
*
VCC
fout = 30 MHz
RL = 50 Ω
D.U.T.
12 p
8p
200 p
L2
C1
f = 900 MHz
0.047 µ
100
*······Disk Capacitor
Unit C : F
R:Ω
L:H
23
L4 : φ1 mm Enameled
Copper Wire
7
22
90°
90°
90°
13
90°
L5 : Bobbin φ5 mm inside dia, φ0.2 mm Enameled Copper
Wire 20 Turns
13
20
7
L3 : φ1 mm Enameled
Copper Wire
90°
120°
7
L2 : φ1 mm Enameled
Copper Wire
11
4
L1 : φ1 mm Enameled
Copper Wire
3
130°
11
L6 : φ0.5 mm Enameled Copper Wire 1 Turn inside dia
φ6 mm
C1 : 20 pF max Air Trimmer Condenser
C2, C3 : 1000 pF Air Core Capacitor
90°
7
2SC2736
VHF Oscillating Output Voltage (Vosc1) Test Circuit
VBB
2.2 k
Vosc Output
L1 : φ0.3 mm Enameled Copper Wire
3 Turns inside dia φ3 mm
1,000 p
200 µ
VCC
1.5 p
D.U.T.
7p
4,700 p
12 p
1.1 M
5.6 p
L1
20,000 p
4,700 p
200
4,700 p 1SV70
VT
fosc Monitor
Unit C : F
R:Ω
L:H
8
Test Frequency
fosc = 300 MHz
2SC2736
UHF Oscillating Output Voltage (Vosc2) Test Circuit
L3
VCC
1,000 p
470
Ferrite Bead
1.2 p
L1
D.U.T.
120 k
9p
VT
1,000 p
L2
330
2,200 p
ISV70
6.8 k
1,000 p
Vosc Output
VBB
Unit R : Ω
C:F
26
Dimensions of Cavity
L1 : Polyurethane Coated
Copper Wire
15
10
8
5
L2 : Polyurethane Coated
Copper Wire
10
(Unit : mm)
L3 : φ0.3 mm Enameled Copper
wire, 10 Turns with
470 Ω (1/4W)Resistor.
Test Frequency
fosc = 930 MHz
9
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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