HITACHI 2SC2899

2SC2899
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
10
V
Collector current
IC
0.5
A
Collector peak current
I C(peak)
1.0
A
Collector power dissipation
PC
0.75
W
10
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC2899
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
VCEO(sus)
400
—
—
V
I C = 0.1 A, RBE = ∞, L = 100
mH
VCEX(sus)
400
—
—
V
I C = 0.5 A, IB1 = –IB2 = 0.1 A,
VBE = –5 V, L = 180 µH,
Clamped
Emitter to base breakdown
voltage
V(BR)EBO
10
—
—
V
I E = 10 mA, IC = 0
Collector cutoff current
I CBO
—
—
20
µA
VCB = 400 V, IC = 0
I CEO
—
—
50
µA
VCE = 350 V, RBE = ∞
hFE1
15
—
—
VCE = 5 V, IC = 0.25 A*1
hFE2
7
—
—
VCE = 5 V, IC = 0.5 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
Turn on time
t on
—
—
1.0
µs
I C = 0.5 A, IB1 = –IB2 = 0.1 A,
Storage time
t stg
—
—
2.0
µs
VCC ≅ 150 V
Fall time
tf
—
—
1.0
µs
DC current transfer ratio
Note:
1. Pulse test
Maximum Collector Dissipation Curve
Area of Safe Operation
12
10
1
1.0
IC (max)
(Continuous)
0.1
Ta = 25°C, 1 Shot
0.01
µs
8
25
Collector Current IC (A)
50 µs
iC (peak)
s
s
0µ
m
n
25
tio
=1
era )
PW
Op 5°C
DC = 2
(T C
Collector power dissipation Pc (W)
I C = 0.25 A, IB = 0.05 A*1
0.001
0
2
50
100
Case Temperature TC (°C)
150
1
3
10
30
100 300 1,000
Collector to emitter Voltage VCE (V)
2SC2899
Transient Thermal Resistance
10
Thermal resistance θj-c (°C/W)
Collector Current Derating Rate
Collector Current derating rate (%)
100
80
IS
/B
Lim
it A
60
re
a
40
20
0
50
100
Case temperature TC (°C)
10 ms–10 s
3
10
1.0
0.03
0.6
400 V, 0.5 A
0.4
0.2
IB2 = –0.1 A
450 V, 0.1 A
0
0
100
200
300
400
500
Collector to emitter Voltage VCE (V)
TC = 25°C
0.01
0.01
0.1
0.01
0.1
1.0
10 (s)
1.0
10 (ms)
Time t
Collector to Emitter Voltage
vs. Base to Emitter Resistance
Collector to emitter voltage VCER (V)
Collector Current IC (A)
0.8
1
0.1
150
350 V, 1 A
ms
0.3
Reverse Bias Area of Safe Operation
1.0
s–
0µ
600
IC = 1 mA
500
400
300
100
1k
10 k
100 k
1M
Base to emitter resistance RBE (Ω)
3
2SC2899
Typical Output Characteristics
Typical Transfer Characteristics
1.0
0.5
TC = 25°C
VCE = 5 V
40
0.4
Collector Current IC (A)
Collector Current IC (A)
50
30
0.3
20
0.2
10
5 mA
0.1
IB = 0
0
0.8
0.6
0.4
0.2
TC = 25°C
1
2
3
4
5
Collector to emitter Voltage VCE (V)
0
0.4
0.8
1.2
1.6
Base to emitter voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
30
75°C
25°C
TC =
–25°C
10
3
VCE = 5 V
1
0.001 0.003 0.01 0.03 0.1 0.3
1.0
Collector current IC (A)
4
Collector to Emitter Saturation
Voltage vs. Base Current
Collector to emitter saturation voltage
VCE (sat) (V)
DC current transfer ratio hFE
100
2.0
10
3
1.0
0.3
0.1 A
0.2 A
1.0
IC = 0.05 A
0.03
TC = 25°C
0.01
0.001 0.003 0.01 0.03 0.1 0.3
1.0
Base current IB (A)
2SC2899
Switching Time vs. Collector Current
10
lC = 5 lB
tstg
3
1.0
Switching time t (µs)
3
VBE (sat)
0.3
0.1
VCE (sat)
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1.0
tf
0.3
ton
0.1
0.03
TC = 25°C
IC = 5 IB1 = –5 IB2
.
VCC =. 150 V
0.01
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1.0
1.0
Switching Time vs. Case Temperature
5
3
Switching time t (µs)
Collector to emitter saturation voltage
VCE (sat) (V)
Base to emitter saturation voltage
VBE (sat) (V)
Saturation Voltage vs. Collector Current
10
tstg
1.0
tf
ton
0.3
IC = 0.5 A
IB1 = –IB2 = 0.1 A
RL = 300 Ω
.
VCC =. 150 V
0.1
0.05
0
25
50
75
100
Case temperature TC (°C)
125
5
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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