HITACHI 2SC3510

2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline
MPAK
2SC3127
3
1
2
1. Emitter
2. Base
3. Collector
2SC3127, 2SC3128, 2SC3510
TO-92 (2)
2SC3128, 2SC3510
1. Base
2. Emitter
3. Collector
3
2
1
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC3127* 1
2SC3128
2SC3510
Unit
Collector to base voltage
VCBO
20
20
20
V
Collector to emitter voltage
VCEO
12
12
12
V
Emitter to base voltage
VEBO
3
3
3
V
Collector current
IC
50
50
50
mA
Collector power dissipation
PC
150
350
600
mW
Junction temperature
Tj
150
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
°C
Note:
2
1. Marking for 2SC3127 is “ID–”.
2SC3127, 2SC3128, 2SC3510
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
12
—
—
V
I C = 1 mA, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 3 V, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 12 V, IE = 0
DC current transfer ratio
hFE
30
90
200
Collector output capacitance
Cob
—
0.9
1.5
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
3.5
4.5
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
—
10.5
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
2.2
—
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
DC Current Transfer Ratio vs.
Collector Current
200
600
DC Current Transfer Ratio hFE
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
2SC3510
400
2SC3128
200
2SC3127
VCE = 5 V, IC = 20 mA
VCE = 5 V
160
120
80
40
0
0
50
100
150
Ambient Temperature Ta (°C)
200
1
2
5
10
20
50
Collector Current IC (mA)
100
3
2SC3127, 2SC3128, 2SC3510
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
5.0
4.0
3.0
2.0
VCE = 5 V
f = 500 MHz
1.0
0
1
2
5
10
20
Collector Current IC (mA)
2.0
1.6
f = 1 MHz
IE = 0
1.2
0.8
0.4
0
1
50
2
5
10
20
50
Collector to Base Voltage VCB (V)
2.0
20
f = 1 MHz
Emitter Common
1.6
1.2
0.8
0.4
0
16
PG
12
VCE = 5 V
f = 500 MHz
8
NF
4
0
1
4
Power Gain and Noise Figure vs.
Collector Current
Power Gain PG (dB)
Noise Figure NF (dB)
Reverse Transfer Capacitance Cre (pF)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
2
5
10
20
50
Collector to Base Voltage VCB (V)
0
10
20
30
40
Collector Current IC (mA)
50
2SC3127, 2SC3128, 2SC3510
Power Gain and Noise Figure vs.
Collector Current
2nd I.M. Distortion vs. Collector Current
70
10
2nd I.M. Distortion 2nd I.M.D. (dB)
Power Gain PG (dB)
Noise Figure NF (dB)
12
PG
VCE = 5 V
f = 900 MHz
8
6
NF
4
2
10
20
30
40
Collector Current IC (mA)
VCC = 12 V
f1 = 210 MHz, f2 = 200 MHz
Vout = 100 dBµ
f2nd = 410 MHz
30
0
60
50
VCC = 12 V
f1 = 600 MHz, f2 = 650 MHz
Vout = 100 dBµ
f2nd = 1,250 MHz
10
20
30
40
Collector Current IC (mA)
50
3rd I.M. Distortion vs. Collector Current
80
3rd I.M. Distortion 3rd I.M.D. (dB)
2nd I.M. Distortion 2nd I.M.D. (dB)
40
50
2nd I.M. Distortion vs. Collector Current
70
30
50
20
0
40
60
f = 190 MHz
70
f = 220 MHz
60
50
VCC = 12 V
f1 = 210 MHz, f2 = 200 MHz
Vout = 100 dBµ
f3rd = 190 MHz, 220 MHz
40
30
20
0
10
20
30
40
Collector Current IC (mA)
50
0
10
20
30
40
Collector Current IC (mA)
50
5
2SC3127, 2SC3128, 2SC3510
3rd I.M. Distortion vs. Collector Current
3rd I.M. Distortion 3rd I.M.D. (dB)
70
f = 550 MHz
60
f = 700 MHz
50
40
VCC = 12 V
f1 = 600 MHz, f2 = 650 MHz
Vout = 100 dBµ
f3rd = 550 MHz, 700 MHz
30
20
0
10
20
30
40
Collector Current IC (mA)
50
Noise Figure vs. Frequency
10
Noise Figure NF (dB)
VCC = 12 V
IC = 20 mA
8
Post AMP. NF
6
2
0
400
6
NF
4
500
600
700
Frequency f (MHz)
800
900
2SC3127, 2SC3128, 2SC3510
Power Gain vs. Frequency
Power Gain PG (dB)
10
8
VCC = 12 V, IC = 20 mA
Input Power Level
–50 dBm
6
4
2
0
250
500
Frequency f (MHz)
750
1,000
Power Gain vs. Frequency
Power Gain PG (dB)
10
8
IC = 30 mA
6
IC = 20 mA
4
VCC = 12 V
Input Power Level
–50 dBm
IC = 10 mA
IC = 5 mA
2
0
250
500
Frequency f (MHz)
750
1,000
7
2SC3127, 2SC3128, 2SC3510
Input and Output Reflection Coefficient
S11&S22 (dB)
Input and Output Reflection Coefficient vs. Frequency
0
S22
–5
S11
–10
–15
VCC = 12 V, IC = 20 mA
Input Power Level
–50 dBm
–20
0
250
500
Frequency f (MHz)
750
1,000
Vhf to Uhf Wide Band Amp. Circuit
50 p
Input
50 p
50 p
470
5p
Rg = 50 Ω
T1
L1
L2
1,200 p
110
2.4 k
RL = 50 Ω
1.2 p 4,400 p
4,400 p
2,200 p
VBB
Parts Spcecification
L1 : Inside dia φ3.0 mm, φ0.4 mm Polyurethane Coated Copper wire 12 Turns.
L2 : Inside dia φ3.5 mm, φ0.5 mm Polyurethane Coated Copper wire 9 Turns.
T1 : Balance wind used Ferrite Core
Outside dia φ4.0 mm, Inside dia φ2.0 mm
φ0.1 mm Polyurethane Coated Copper wire 3 Turns.
Ratio Input to Output is 2 : 1
8
Output
VCC
2.5 p
Unit R : Ω
C:F
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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