HITACHI 2SC4366

2SC4366
Silicon NPN Epitaxial
Application
Low Frequency amplifier
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4366
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
15
V
Collector current
IC
300
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
60
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
50
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
15
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 50 V, IE = 0
Base to emitter voltage
VBE
—
—
0.75
V
VCE = 6 V, IC = 1 mA
DC current transfer ratio
hFE1
800
—
2000
VCE = 6 V, IC = 100 mA
(pulse)
hFE2
500
—
—
VCE = 6 V, IC = 1 mA
VCE(sat)
—
—
0.3
Collector to emitter saturation
voltage
Note: Marking is “ZI–”.
2
V
I C = 300 mA, IB = 30 mA
(pulse)
2SC4366
Typical Output Characteristics
50
150
Collector Cuttent IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
40
40
30
25
30
20
20
15
10
10
5 µA
IB = 0
0
50
100
150
Ambient Temperature Ta (°C)
0
Saturation Voltage vs. Collector
Current
VCE = 6 V
Pulse
3,000
Ta = 75°C
1,000
25
–25
300
100
1.0
Base to Emitter Saturation Voltage
VBE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
10,000
Ta = 25°C
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector
Current
DC Current Transfer Ratio hFE
35
VBE(sat)
0.3
0.1
VCE(sat)
0.03
IC = 10 IB
Ta = 25°C
Pulse
0.01
1
3
10
30
100 300
Collector Current IC (mA)
1,000
1
3
10
30
100 300
Collector Current IC (mA)
1,000
3
2SC4366
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs. Collector
Current
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
1,000
300
100
30
VCE = 6 V
Ta = 25°C
Pulse
10
1
4
3
10
30
100 300
Collector Current IC (mA)
1,000
100
30
f = 1 MHz
IE = 0
Ta = 25°C
10
3
1
0.1
0.3
1.0
3
10
30
100
Collector to Base Voltage VCB (V)
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.