HITACHI 2SC4367

2SC4367
Silicon NPN Epitaxial
Application
High Frequency amplifier
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SC4367
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
100
mA
Collector peak current
iC (peak)
200
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
20
—
—
V
I C = 3 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
1.0
µA
VCB = 10 V, IE = 0
DC current transfer ratio
hFE
40
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
I C = 20 mA, IB = 4 mA
Gain bandwidth product
fT
600
1000
—
MHz
VCE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
1.3
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
2
VCE = 10 V, IC = 10 mA
2SC4367
Typical Output Characteristics
30
600
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
400
200
0
24
140
120
100
18
80
12
60
40
6
IB = 20 µA
4
8
12
16
10
Collector to Emitter Voltage VCE (V)
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
100
20
Ta = 75
°C
25
–25
Collector Current IC (mA)
50
10
5
2
1
DC Current Transfer Ratio hFE
1,000
VCE = 10 V
Pulse
VCE = 10 V
Pulse
500
Ta = 75°C
25
200
–25
100
50
20
10
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
1
2
5
10 20
50
Collector Current IC (mA)
100
3
Collector to Emitter Saturation Voltage vs.
Collector Current
10
IC = 10 IB
Pulse
Ta = –25°C
1.0
25
75
0.1
Gain Bandwidth Product vs. Collector
Current
10,000
Gain Bandwidth Product fT (MHz)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
2SC4367
VCE = 10 V
Pulse
1,000
100
0.01
1
2
5
10
20
50
Collector Current IC (mA)
100
1
2
5
10
20
50
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
10
f = 1 MHz
IE = 0
5
2
1.0
0.5
0.2
0.1
1
4
2
5
10
20
50 100
Collector to Base Voltage VCB (V)
100
Unit: mm
4.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.5 ± 0.1
10.1 Min
2.3 Max
8.0 ± 0.5
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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