2SC454 Silicon NPN Epitaxial Application High frequency amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC454 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 30 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 18 V, IE = 0 Emitter cutoff current I EBO — — 0.5 µA VEB = 2 V, IC = 0 100 — 500 1 DC current transfer ratio hFE* Base to emitter voltage VBE — 0.63 0.75 V VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) — — 0.2 V I C = 10 mA, IB = 1 mA Gain bandwidth product fT — 230 — MHz VCE = 12 V, IC = 2 mA Collector output capacitance Cob — — 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz Noise figure NF — — 25 dB VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 Ω IF power gain IFG — 35 — dB VCE = 12 V, IC = 1 mA, f = 455 kHz, Rg = 1.5 kΩ, RL = 40 kΩ Note: 1. The 2SC454 is grouped by h FE as follows. B C D 100 to 200 160 to 320 250 to 500 2 VCE = 12 V, IC = 2 mA 2SC454 Small Signal y Parameters (VCE = 12 V, IC = 2mA, Emitter Common) Item Symbol f 2SC454B 2SC454C Unit Input admittance yie 455 kHz 0.35 + j0.074 0.28 + j0.070 mS 1MHz 0.35 + j0.130 0.28 + j0.125 455 kHz –j0.005 –j0.005 1MHz –j0.013 –j0.013 455 kHz 66 – j2.43 64 – j2.60 1MHz 66 – j4.27 66 – j5.7 455 kHz 0.006 + j0.02 0.007 + j0.022 1MHz 0.006 + j0.047 0.007 + j0.049 Reverse transfer admittance Forward transfer admittance Output admittance yre yfe yoe 16 W m 50 80 0 Collector current IC (mA) 200 100 20 20 100 mS Typical Output Characteristics (1) 250 150 mS = PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve mS 12 60 8 40 4 20 µA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 3 2SC454 Typical Transfer Characteristics (1) Typical Output Characteristics (2) 5 5 25 4 Collector Current IC (mA) Collector Current IC (mA) 30 20 3 15 2 10 1 5 µA 4 VCE = 12 V 3 2 1 IB = 0 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics (2) 300 16 12 8 4 0 4 VCE = 12 V 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE Collector Current IC (mA) 20 240 VCE = 12 V 180 120 60 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 2SC454 Percentage of Relative to VCE = 12 V (%) Gain Band width Product vs. Collector Current VCE = 12 V 400 300 200 100 Percentage of Relative to IC = 2 mA (%) 0 0.1 0.3 1.0 3 10 Collector Current IC (mA) 1,000 500 200 goe 100 50 20 boe gie bie bie gie boe goe 10 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) goe 200 bie 100 gie boe IC = 2 mA f = 455 kHz, 1 MHz gie b ie boe goe 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) Transfer Admittance vs. Collector to Emitter Voltage Input/Output Admittance vs. Collector Current VCE = 12 V f = 455 kHz, 1 MHz 500 30 10 Percentage of Relative to VCE = 12 V (%) Gain Bandwidth Product fT (MHz) 500 Input/Output Admittance vs. Collector to Emitter Voltage 500 bre 200 bfe 100 gfe IC = 2 mA f = 455 kHz, 1 MHz gfe bre bfe 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 5 2SC454 Percentage of Relative to IC = 2 mA (%) Transfer Admittance vs.Collector Current 6 1,000 500 VCE = 12 V f = 455 kHz, 1 MHz 200 100 bfe bre gfe bre 50 20 10 0.1 gfe bfe 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.