HITACHI 2SC4702

2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage
VCEO = 300 V
• Small Cob
Cob = 1.5 pF Typ.
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4702
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
300
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
300
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.1
µA
VCB = 250 V, IE = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.5
V
I C = 30 mA, IB = 3 mA
DC current transfer ratio
hFE
60
—
150
Gain bandwidth product
fT
—
80
—
MHz
VCE = 6 V, IC = 5 mA
Collector output capacitance
Cob
—
1.5
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Note: Marking is “XV–”.
2
VCE = 6 V, IC = 2 mA
2SC4702
Typical Output Characteristics
10
150
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
100
80
Pulse Test
60
8
50
6
40
4
30
2
20
IB = 10 µA
0
50
100
Ambient Temperature Ta (°C)
0
150
20
40
60
80
100
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
100
1,000
25
10
–25
1.0
VCE = 6 V
Pulse Test
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio hFE
Collector Current IC (mA)
Ta = 75°C
Ta = 75°C
25
–25
100
10
VCE = 6 V
Pulse Test
1
0.1
1.0
10
Collector Current IC (mA)
100
3
Collector to Emitter Saturation Voltage vs.
Collector Current
10
IC/IB = 10
Pulse Test
1.0
Ta = 75°C
25
–25
0.1
0.01
0.1
Gain Bandwidth Product vs.
Collector Current
1,000
Gain Bandwidth Product fT (MHz)
Collector to Emitter Saturation Voltage
VCE (sat) (V)
2SC4702
1.0
10
Collector Current IC (mA)
100
VCE = 6 V
100
10
1
0.1
1.0
10
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
4
100
f = 1 MHz
IE = 0
10
1.0
0.1
0.1
1.0
10
100
Collector to Base Voltage VCB (V)
100
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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