2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector (Flange) 3. Emitter 1 2 1 ID 3 3 2SC4742 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6 V Collector current IC 6 A Collector peak current IC(peak) 7 A Collector surge current IC(surge) 16 A 50 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current ID 7 A Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 400 mA, IC = 0 Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 DC current transfer ratio hFE — — 25 Collector to emitter saturation voltage VCE(sat) — — 2.0 V IC = 5 A, IB = 1.25 A Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 5 A, IB = 1.25 A C to E diode forward voltage VECF — — 2.0 V IF = 6 A Fall time tf — — 0.4 µs ICP = 5 A, IB1 = 1 A, IB2 = –2 A 2 VCE = 5 V, IC = 1 A