2SC4745 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3PFM • High speed switching tf = 0.2 µs typ • High breakdown voltage VCBO = 1500 V • Isolated package; TO-3PFM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit 1 2 3 ————————————————————– Collector to base voltage VCBO 1500 V ————————————————————– Collector to emitter voltage VCEO 800 1. Base 2. Collector 3. Emitter V ————————————————————– Emitter to base voltage VEBO 6 V ————————————————————– Collector current IC 6 A ————————————————————– Collector peak current iC(peak) 7 A ————————————————————– Collector surge current iC(surge) 16 A ————————————————————– Collector power dissipation PC*1 50 W ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 800 — — V IC = 10 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 mA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 7 — 30 VCE = 5 V, IC = 1 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 5 V IC = 5 A, IB = 1 A ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 5 A, IB = 1 A ———————————————————————————————————————————