HITACHI 2SC4791

2SC4791
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10 GHz Typ.
• High gain, low noise figure
PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4791
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I CBO
—
—
10
µA
VCB = 15 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
0.4
0.75
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
7.0
10.0
—
GHz
VCE = 5 V, IC = 10 mA
Power gain
PG
12.5
15.5
—
dB
VCE = 5 V, IC = 10 mA,
f = 900 MHz
Noise figure
NF
—
1.2
2.5
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “YA–”.
Attention: This is electrostatic sensitive device.
2
VCE = 5 V, IC = 10 mA
2SC4791
DC Current Transfer Ratio
vs. Collector Current
200
DC Current Transfer Ratio h FE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
150
160
100
50
0
VCE = 5V
120
50
100
Ambient Temperature Ta (°C)
80
40
0
0.1 0.2
150
Collector Output Capacitance Cob (pF)
f T (GHz)
VCE = 5 V
Gain Bandwidth Product
8
6
VCE = 1 V
4
2
0
2
5
10
20
Collector Current I C (mA)
2
5
10 20
50
Collector Output Capacitance vs.
Collector to Base Voltage
12
1
0.5 1
Collector Current I C (mA)
Gain Bandwidth Product
vs. Collector Current
10
VCE = 1V
50
0.56
IE = 0
0.52
f = 1 MHz
0.48
0.44
0.40
0.36
1
2
5
10
20
0.5
Collector to Base Voltage VCB (V)
3
2SC4791
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
5
16
VCE = 5V
12
VCE = 1V
8
4
0
0.3
4
3
2
1
1
3
10
Collector Current I C (mA)
4
f = 900 MHz
Noise Figure NF (dB)
Power Gain PG (dB)
f = 900 MHz
30
0
0.3
VCE = 5V
VCE = 1V
1
3
10
Collector Current I C (mA)
30
2SC4791
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
90°
1.5
.6
2
.4
Scale: 4 / div.
60°
120°
3
30°
150°
4
5
.2
10
.4
.2
0
.6 .8 1.0 1.5 2
3 45
10
0°
180°
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–1.5
–.8 –1
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
–60°
–90°
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
–120°
–.6
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
120°
Scale: 0.04 / div.
60°
.6
.8
1
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4 .6 .8 1.0 1.5 2
3 45
10
–10
–30°
–150°
–5
–4
–3
–.2
–.4
–120°
–60°
–90°
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
–2
–.6
–1.5
–.8 –1
Condition: VCE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
5
2SC4791
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
.6
1
1.5
2
.4
Scale: 0.8 / div.
60°
3
.2
.4
.6 .8 1.0 1.5 2
30°
150°
4
5
10
.2
0
90°
120°
3 4 5 10
0°
180°
–10
–5
–4
–3
–.2
–.4
–30°
–150°
–2
–120°
–.6
–60°
–90°
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
–1.5
–.8 –1
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
S22 Parameter vs. Frequency
S12 Parameter vs. Frequency
120°
90° Scale: 0.06 / div.
60°
.8
.6
1
1.5
2
.4
30°
150°
0°
180°
3
4
5
10
.2
.2
0
.4
.6 .8 1.0 1.5 2
3 4 5
10
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–120°
–60°
–90°
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
6
–2
–.6
–1.5
–.8 –1
Condition: VCE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 0.5 mA)
(I C = 1 mA)
2SC4791
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω, Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.859
–15.9
13.192
165.5
0.016
82.3
0.974
–9.3
200
0.790
–30.6
12.225
151.9
0.031
73.9
0.914
–17.5
300
0.700
–44.0
10.967
139.9
0.043
68.2
0.841
–24.2
400
0.618
–54.8
9.802
130.2
0.053
64.0
0.771
–29.2
500
0.543
–64.7
8.686
122.4
0.061
61.4
0.710
–32.5
600
0.477
–73.3
7.761
116.0
0.068
59.8
0.660
–34.8
700
0.421
–80.1
6.955
110.2
0.074
58.9
0.619
–36.7
800
0.369
–86.3
6.316
105.5
0.080
58.7
0.584
–38.2
900
0.331
–92.8
5.748
101.0
0.086
58.1
0.557
–39.3
1000
0.287
–99.4
5.275
97.6
0.091
57.9
0.535
–40.3
1100
0.226
–104.8
4.869
94.1
0.097
57.9
0.517
–41.2
1200
0.220
–110.7
4.498
90.6
0.102
58.1
0.502
–42.1
1300
0.200
–110.7
4.169
88.2
0.107
58.4
0.492
–43.1
1400
0.179
–125.0
3.926
85.4
0.113
58.2
0.479
–44.2
1500
0.159
–131.7
3.698
83.0
0.119
58.2
0.471
–44.9
1600
0.142
–138.0
3.493
80.5
0.125
58.4
0.463
–46.0
1700
0.126
–147.6
3.311
78.1
0.130
58.5
0.456
–47.2
1800
0.117
–154.1
3.143
76.1
0.136
58.2
0.450
–48.2
1900
0.109
–166.9
3.008
74.0
0.142
58.0
0.445
–49.3
2000
0.102
179.8
2.864
71.9
0.147
57.9
0.440
–50.4
7
2SC4791
S Parameter (VCE = 5 V, IC = 10 mA, ZO = 50 Ω, Emitter Common)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.758
–22.4
19.871
159.8
0.015
78.6
0.942
–12.6
200
0.650
–41.5
17.252
142.4
0.028
71.0
0.842
–22.5
300
0.538
–57.1
14.423
129.0
0.037
66.8
0.739
–28.5
400
0.445
–69.1
12.168
119.4
0.045
64.3
0.659
–32.0
500
0.383
–79.6
10.376
112.2
0.052
63.3
0.600
–33.7
600
0.320
–87.8
8.995
106.7
0.058
63.4
0.577
–34.9
700
0.274
–95.4
7.914
101.8
0.065
63.7
0.524
–35.4
800
0.230
–102.4
7.057
97.8
0.071
64.0
0.499
–36.3
900
0.205
–109.8
6.332
93.9
0.076
64.4
0.480
–36.7
1000
0.174
–116.9
5.778
91.0
0.083
64.5
0.466
–37.4
1100
0.154
–125.9
5.291
88.1
0.089
64.6
0.454
–38.0
1200
0.131
–135.1
4.862
85.4
0.096
64.7
0.444
–38.7
1300
0.118
–142.7
4.508
82.9
0.102
64.6
0.438
–39.4
1400
0.108
–154.7
4.226
80.8
0.109
64.5
0.431
–40.4
1500
0.104
–165.2
3.961
78.7
0.116
64.3
0.426
–41.4
1600
0.093
–178.6
3.718
76.4
0.122
64.1
0.420
–42.4
1700
0.095
169.4
3.532
74.3
0.129
64.0
0.417
–43.6
1800
0.094
158.4
3.347
72.4
0.135
63.4
0.413
–44.8
1900
0.094
148.2
3.190
70.5
0.142
63.2
0.409
–46.0
2000
0.101
136.0
3.036
68.6
0.148
63.0
0.406
–47.3
8
S21
S12
S22
2SC4791
S Parameter (VCE = 1 V, IC = 0.5 mA, ZO = 50 Ω, Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.983
–6.6
1.757
174.0
0.023
85.8
0.995
–4.1
200
0.976
–13.1
1.723
167.3
0.047
80.7
0.990
–8.2
300
0.961
–19.6
1.741
160.2
0.071
76.4
0.980
–12.3
400
0.938
–26.2
1.734
154.0
0.093
71.9
0.966
–16.4
500
0.920
–32.5
1.666
147.6
0.093
67.6
0.950
–20.1
600
0.903
–38.6
1.629
142.6
0.133
63.4
0.932
–23.9
700
0.868
–44.6
1.584
136.2
0.151
59.9
0.913
–27.3
800
0.836
–50.4
1.564
130.6
0.166
56.2
0.891
–30.6
900
0.819
–56.1
1.520
125.3
0.180
52.8
0.869
–33.8
1000
0.780
–61.6
1.484
120.3
0.193
49.5
0.849
–36.8
1100
0.749
–66.9
1.434
115.3
0.204
46.7
0.828
–39.6
1200
0.713
–71.7
1.369
110.4
0.213
44.0
0.810
–42.1
1300
0.687
–77.0
1.322
107.2
0.221
41.4
0.794
–44.8
1400
0.659
–82.2
1.317
102.3
0.229
38.9
0.774
–47.3
1500
0.629
–86.9
1.282
98.5
0.234
36.7
0.757
–49.7
1600
0.601
–91.2
1.248
94.6
0.239
34.6
0.741
–51.9
1700
0.578
–96.7
1.215
91.0
0.243
32.4
0.726
–54.2
1800
0.656
–101.0
1.187
87.5
0.248
30.4
0.713
–56.3
1900
0.532
–106.3
1.155
84.4
0.249
28.9
0.699
–58.4
2000
0.508
–111.4
1.124
81.0
0.251
27.3
0.686
–60.5
9
2SC4791
S Parameter (VCE = 1 V, IC = 1 mA, ZO = 50 Ω, Emitter Common)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.969
–8.3
3.406
172.8
0.023
84.7
0.992
–5.3
200
0.953
–16.4
3.337
165.1
0.046
79.1
0.980
–10.3
300
0.927
–25.1
3.270
157.0
0.070
73.7
0.960
–15.8
400
0.896
–33.0
3.218
149.3
0.090
68.8
0.933
–20.8
500
0.860
–40.5
3.068
143.0
0.108
64.2
0.905
–25.1
600
0.820
–47.7
2.950
136.9
0.124
59.7
0.874
–29.3
700
0.778
–54.5
2.816
130.7
0.139
56.3
0.844
–33.2
800
0.731
–61.1
2.711
124.8
0.151
52.9
0.810
–36.7
900
0.703
–67.5
2.580
119.7
0.162
49.8
0.780
–39.9
1000
0.657
–73.8
2.470
114.8
0.171
46.9
0.752
–42.8
1100
0.617
–79.8
2.363
110.2
0.178
44.7
0.725
–45.5
1200
0.575
–84.8
2.229
105.3
0.185
42.5
0.703
–47.7
1300
0.549
–89.8
2.104
102.4
0.191
40.8
0.686
–50.1
1400
0.516
–96.2
2.053
97.9
0.196
38.8
0.660
–52.5
1500
0.485
–101.5
1.975
94.3
0.199
37.6
0.641
–54.5
1600
0.456
–106.7
1.891
90.9
0.203
36.2
0.623
–56.4
1700
0.429
–111.9
1.827
87.8
0.206
34.9
0.607
–58.3
1800
0.412
–115.9
1.751
84.6
0.209
33.7
0.593
–60.3
1900
0.389
–122.6
1.700
81.7
0.211
33.2
0.580
–62.1
2000
0.368
–128.0
1.645
78.8
0.212
32.4
0.567
–64.1
10
S21
S12
S22
Unit: mm
0.95
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.16 – 0.06
2.8
1.5 ± 0.15
+ 0.1
0.4 – 0.05
+ 0.1
0.65
+ 0.1
0.4 – 0.05
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
—
Conforms
0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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