HITACHI 2SC4928

2SC4928
Silicon NPN Triple Diffused
Application
TO–3PL
Character Display Horizontal Deflection Output
Features
• High speed switching time: 0.5 µs max
• High breakdown voltage, high current:
VCBO = 1500 V, IC = 15 A
• Suitable for large size CRT Display
1
2
3
1. Base
2. Collector
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
1500
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
800
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC
15
A
———————————————————————————————————————————
Collector surge current
ic(surge)
20
A
———————————————————————————————————————————
Collector power dissipation
PC*1
150
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
2SC4928
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown
voltage
V(BR)CEO
800
—
—
V
IC = 10 mA,
RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
IE = 10 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500
µA
VCE = 1500 V,
RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
—
—
38
—
VCE = 5 V,
IC = 1 A
———————————————————————————————————————————
Collector to emitter saturation
voltage
VCE(sat)
—
—
5
V
IC = 12 A, IB = 3 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
IC = 12 A, IB = 3 A
———————————————————————————————————————————
Fall time
tf
—
—
0.5
µs
ICP = 8 A, IB1 = 1.4 A
IB2 ≈ –2.5 A,
fH = 31.5 kHz
———————————————————————————————————————————
Area of Safe Operation
Maximum Collector Power Dissipation Curve
200
I C (A)
Pc (W)
40
Collector Current
Collector Power Dissipation
150
100
50
30
20
(100V, 20A)
10
(800V, 4A)
0.5 mA
0
50
100
Case Temperature
150
Tc (°C)
200
0
500
1000
1500
2000
Collector to Emitter Voltage VCE (V)
2SC4928
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
20
100
h FE
2.5A
2.0
1.5
DC Current Transfer Ratio
Collector Current
I C (A)
Tc = 25 °C
1.0
10
0.5
0.2
0.1
IB = 0
0
10
2
4
6
8
Collector to Emitter Voltage V CE (V)
25 °C
20
10
Tc = –25 °C
5
2
VCE = 5 V
1
0.1 0.2
0.5
1
2
5
10
20
I C (A)
Base to Emitter Saturation Voltage
vs. Collector Current
5
10
Base to Emitter Saturation Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
75 °C
Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
I C / IB = 4
2
1
0.5
0.2
50
Tc = –25 °C
25 °C
0.1
75 °C
0.05
0.1 0.2
0.5 1
2
5 10
Collector Current I C (A)
20
5
I C / IB = 4
Tc = –25 °C
2
25 °C
1
0.5
75 °C
0.2
0.1
0.1 0.2
0.5
1
2
Collector Current
5
I C (A)
10
20
2SC4928
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Base Current
10
IC = 8 A
10 A
5
12 A
14 A
Tc = 25 °C
0
0.1
0.2
0.5
1
Base Current
2
5
I B (A)
10