HITACHI 2SC535

2SC535
Silicon NPN Epitaxial Planar
Application
VHF amplifier, mixer, local oscillator
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC535
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
20
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
2
2SC535
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
4
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IE = 0
60
—
200
1
DC current transfer ratio
hFE*
Base to emitter voltage
VBE
—
0.72
—
V
VCE = 6 V, IC = 1 mA
Collector to emitter saturation
voltage
VCE(sat)
—
0.17
—
V
I C = 20 mA, IB =4 mA
Gain bandwidth product
fT
450
940
—
MHz
VCE = 6 V, IC = 5 mA
Collector output capacitance
Cob
—
0.9
1.2
pF
VCB = 10 V, IE = 0, f = 1 MHz
Power gain
PG
17
20
—
dB
VCE = 6 V, IC = 1 mA,
f = 100 MHz
Noise figure
NF
—
3.5
5.5
dB
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Input admittance (typ)
yie
1.3 + j5.3
mS
VCE = 6 V, IC = 1 mA,
f = 100 MHz
Reverse transfer admittance
(typ)
yre
–0.078 – j0.41
mS
Foward transfer admittance
(typ)
yfe
32 – j10
mS
Output admittance (typ)
yoe
0.08 + j0.82
mS
Note:
VCE = 6 V, IC = 1 mA
1. The 2SC535 is grouped by h FE as follows.
B
C
60 to 120
100 to 200
3
2SC535
Typical Output Characteristics
20
Collector Current IC (mA)
Collector power dissipation PC (mW)
Maximum Collector Dissipation Curve
150
100
50
12
P
C
75
8
=1
00
50
4
mW
25 µA
50
100
Ambient Tmperature Ta (°C)
0
150
4
3
50
40
30
2
20
1
10µA
IB = 0
0
4
8
12
20
16
Collector to Emitter Voltage VCE (V)
8
12
16
20
DC Current Transfer Ratio vs.
Collector Current
120
DC Current Transfer ratio hFE
5
4
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Collector Current IC (mA)
16
IB = 0
0
4
300
275
250
225
200
175
150
125
100
VCE = 6 V
100
80
60
40
20
0
0.1
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
20
2SC535
Typical Transfer Cahracteristics (1)
Typical Transfer Cahracteristics (2)
20
5
Collector Current IC (mA)
VCE = 6 V
12
8
4
0
0.6
0.8
0.7
Base to Emitter Voltage VBE (V)
4
3
2
1
0
0.6
0.8
0.7
Base to Emitter Voltage VBE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance Cob (pF)
Collector Current IC (mA)
VCE = 6 V
16
1.5
1.3
f = 1 MHz
IE = 0
1.1
0.9
0.7
0.5
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
30
5
2SC535
Gain Bandwidth Product fT (MHz)
Gain Bandwidth Product vs.
Collector Current
1,000
800
VCE = 6 V
600
400
200
0
0.1
0.2
0.5
1.0
2
5
10
20
Collector Current IC (mA)
Noise Figure vs. Collector Current
Noise figure NF (dB)
8
6
4
2
0
0.2
6
IC = 1 mA
f = 100 MHz
Rg = 50 Ω
0.5
1.0
2
Collector Current IC (mA)
5
10
2SC535
Noise Figure vs. Collector to
Emitter Voltage
Noise Figure vs. Signal Source Resistance
8
VCE = 6 V
IC = 1 mA
f = 100 MHz
Noise figure NF (dB)
Noise figure NF (dB)
8
6
4
2
0
20
VCE = 6 V
f = 100 MHz
Rg = 50 Ω
6
4
2
0
50
100
200
500
Signal Source Resistance Rg (Ω)
1
1,000
2
5
10
20
Collecter to Emitter Voltage VCE (V)
Input Admittance Characteristics
18
100 MHz Power Gain Test Circuit
IN
f = 100 MHz
Rg = 100 Ω
300 p
D.U.T.
0.1 µ
10 p
max
3k
500
OUT
Rl = 550 Ω
0.01 µ
0.01 µ
VEE
0.01 µ
VCC
Unit R : Ω
C:F
Input Suceptance bie (mS)
16
yie = gie + jbie
VCE = 6 V
14
12
150
10 f = 200 MHz
8
150
0
2
100
200
70
50 MHz
6 100 5 mA
70 3 mA
4
2 mA
2 50
IC = 1 mA
4 6 8 10 12 14 16 18
Input Conductance gie (mS)
7
2SC535
Reverse Transfer Admittance
Characteristics
Reverse Transfer Conductance gre (mS)
–0.20 –0.16 –0.12 –0.08 –0.04
0
70
100
–0.2
–0.4
150
–0.6
200
IC = 5 mA 3 2 1
–0.8
–1.0
Forward Transfer Suceptance bfe (mS)
f = 50 MHz
Reverse Transfer Suceptance bre (mS)
yre = gre + jbre
VCE = 6 V
Forward Transfer Admittance
Characteristics
Forward Transfer Conductance gfe (mS)
0
20
40
60
80 100 120
–20
–40
1.6
3 mA
–100
5 mA
200
150
100
–120
Input Admittance vs. Collector
to Emitter Voltage
10
yoe = goe + jboe
VCE = 6 V
IC = 1 mA 2
3
5
f = 200 MHz
1.2
150
100
0.8
70
0.4
2 mA
70
–80
Input Admittance yie (mS)
Output Suceptance boe (mS)
2.0
IC = 1 mA
f = 50 MHz
–60
Output Admittance Characteristics
2.4
yfe = gfe + jbfe
VCE = 6 V
bie
5
yie = gie + jbie
IC = 1 mA
f = 100 MHz
2
gie
1.0
50
0.5
0
8
0.1
0.2
0.3 0.4
0.5
Output Conductance goe (mS)
0.6
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
2SC535
Reverse Transfer Suceptance bre (mS)
Input Admittance yie (mS)
20
yie = gie + jbie
VCE = 6 V
f = 100 MHz
10
5
bie
2
1.0
gie
0.5
0.2
0.1
0.2
0.5 1.0
2
5
Collector Current IC (mA)
–1.0
–0.1
–5
yre = gre + jbre
IC = 1 mA
f = 100 MHz
–0.2
–0.1
–0.005
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
Forward Transfer Admittance vs.
Collector to Emitter Voltage
bre
–0.1
–0.05
–0.02
gre
–0.01
–0.05
–0.005
–0.02
–0.01
0.1
–0.002
–0.001
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
Forward Transfer Admittance yie (mS)
–0.1
Reverse Transfer Conductance gre (mS)
Reverse Transfer Suceptance bre (mS)
–0.2
–0.01
–0.05
10
–1.0
yre = gre + jbre
VCE = 6 V
f = 100 MHz
–0.02
gre
Reverse Transrer Admittance vs.
Collector Current
–0.5
–0.05
bre
Reverse Transfer Conductance gre (mS)
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
Input Admittance vs. Collector Current
100
yfe = gfe + jbfe
IC = 1 mA
f = 100 MHz
50
gfe
20
–bfe
10
5
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
9
2SC535
50
20
gfe
–bfe
10
5
2
1
0.1
0.2
2.0
yfe = gfe + jbfe
VCE = 6 V
f = 100 MHz
goe
0.1
1.0
boe
0.05
0.5
yeo = goe + jboe
IC = 1 mA
f = 100 MHz
0.02
0.2
0.1
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
1
0.01
2
10
5
20
Collector to Emitter Voltage VCE (V)
Output Admittance vs. Collector Current
Output Admittance yoe (mS)
2.0
1.0
0.5
0.2
0.1
goe
0.05
0.02
0.1
10
boe
yoe = goe + jboe
VCE = 6 V
f = 100 MHz
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
Output Conductance goe (mS)
100
Output Admittance vs. Collector
to Emitter Voltage
Output Suceptance boe (mS)
Forward Transrer Admittance yie (mS)
Forward Transrer Admittance vs.
Collector Current
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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