HITACHI 2SC5390

2SC5390
Silicon NPN Epitaxial
High Frequency Amplifier
ADE-208-492 (Z)
1st. Edition
December. 1996
Features
• Excellent high frequency characteristics
fT = 1.4GHz (typ.)
• Low output capacitance
C ob = 2.4 pF (typ.)
• Isolated package
TO–126FM
Outline
TO–126FM
12
3
1. Emitter
2. Collector
3. Base
2SC5390
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
110
V
Collector to emitter voltage
VCEO
110
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
200
mA
Collector peak current
ic(peak)
400
mA
Collector power dissipation
PC
1.4
W
7
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V(BR)CBO
110
—
—
V
I C = 10É A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
110
—
—
V
I C = 1mA, RBE = ∞
Collector cutoff current
I CBO
—
—
10
µA
VCB = 100V, IE = 0
Emitter cutoff current
I EBO
—
—
10
µA
VE B = 3V, IC = 0
DC current transfer ratio
hFE
30
—
100
Base to emitter voltage
VBE
—
—
1
V
VCE = 10 V, IC = 10mA
Collector to emitter saturation VCE(sat)
voltage
—
—
1
V
I C = 200mA, IB = 20mA
Gain bandwidth product
1.0
1.4
—
GHz
VCE = 10 V, IC = 50mA
—
2.4
3.5
pF
VCB = 30V, IE = 0
f = 1MHz
fT
Collector Output capacitance Cob
VCE = 10 V, IC = 10mA
2SC5390
Main Characteristics
Areaof Safe Operaion
1000
I C (mA)
8
6
Collector Current
Tc
4
2
Ta
ic(peak)
300 I max
C
100
30
3
1 shot pulse
Ta = 25 °C
50
100
150
200
Ambient Temperature Ta (°C)
Case Temperature Tc (°C)
1
h FE
DC Current Transfer Ratio
I C (mA)
Collector Current
500
mA A
10 9 mmAA
8 m A
7 m
6 mA
5
A
4m A
m
3
A
2m
100
1 mA
Ta = 25 °C
Pulse Test
0
3
10
30
100 300 1000
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
200
10 ms
10
1
0
PW = 1 ms
n
tio
era )
Op 5°C
DC c = 2
(T
Collector Power Dissipation
Pc (W)
Collector Power Dissipation
vs. Temperature
IB = 0
5
200
25 °C
50
Ta = –25 °C
20
10
V CE = 10 V
Pulse Test
5
10
Collector to Emitter Voltage VCE (V)
75 °C
100
1
2
5 10 20
50 100 200
Collector Current IC (mA)
2SC5390
Base to Emitter Saturation Voltage
vs. Collector Current
5
1
I C / I B = 10
Pulse Test
0.5
0.2
Ta = –25 °C
25 °C
0.1
Base to Emitter Saturation Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
I C / I B = 10
Pulse Test
2
Ta = –25 °C
1
0.5
0.05
75 °C
0.2
0.02
0.1
0.01
1
5
2
10
1
50 100 200
20
Gain Bandwidth vs. Collector Current
5
2
1
0.5
0.2
VCE = 10 V
Pulse Test
0.1
1
2
5
10
20
Collector Current IC
50 100 200
(mA)
Collector Output Capacintace Cob (pF)
Collector Current IC (mA)
Gain Bandwidth f T (MHz)
25 °C
75 °C
2
5 10 20
50 100 200
Collector Current IC (mA)
Collctor Output Capacitance vs.
Collector to Base Voltage
10
5
2
1
0.5
0.2 I E = 0 ,
f = 1MHz
0.1
1
2
5
10
20
50
100
Collector to Base Voltage VCB (V)
2SC5390
Package Dimentions
φ 3.2 +0.15
–0.1
8.0 ± 0.4
6.0
3.2 ± 0.4
1.9 Max
11.0 ± 0.5
3.5
1.0
Unit: mm
15.6 ± 0.5
1.7
0.65
2.29 ± 0.5
0.7
2.29 ± 0.5
Hitachi Code TO–126FM
—
EIAJ
—
JEDEC
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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