2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz Outline TO–3PFM 1 1. Base 2. Collector 3. Emitter 2 3 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 700 V Emitter to base voltage VEBO 6 V Collector current IC 20 A Collector peak current ic(peak) 40 A 150 W Note1 Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown voltage V(BR)CEO 700 — — V I C = 10mA, RBE = • Emitter to base breakdown voltage V(BR)EBO 6 — — V I E = 10mA, IC = 0 Collector cutoff current I CES — — 500 µA VCE = 1500V, RBE = 0 DC current transfer ratio hFE1 10 — 40 VCE = 5 V, IC = 1A DC current transfer ratio hFE2 3.5 — 6.5 VCE = 5 V, IC = 10A Collector to emitter saturation voltage VCE(sat) — — 5 V I C = 12A, IB = 4A Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 12A, IB = 4A Fall time tf — 0.2 0.4 µs I CP = 8A, IB1= 3A f H = 31.5kHz Fall time tf — 0.15 — µs I CP = 8A, IB1= 2A f H = 64kHz 2 2SC5470 Main Characteristics Area of Safe Operaion 50 I C (A) 200 150 Collector Current Collector Power Dissipation Pc (W) Collector Power Dissipation vs. Temperature 100 50 20 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 0.1 100 5000 1000 10 Collector to Emitter Voltage VCE (V) 200 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 100 h FE 2.0 A A 1.8 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A DC Current Transfer Ratio Collector Current I C (A) 10 0.6 A 5 0.4 A 0.2 A IB=0 Tc = 25 °C 0 5 L = 180 µH I B2 = –1 A duty < 1 % Tc = 25°C 10 Collector to Emitter Voltage V CE (V) 50 75 °C 20 10 5 25 °C Tc = –25 °C 2 VCE = 5 V 1 2 5 10 0.1 0.2 0.5 1 Collector Current I C (A) 20 3 2SC5470 Base to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 10 IC / I B= 3 Base to Emitter Saturation Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 75 °C 2 1 25 °C 0.5 0.2 0.1 Tc = –25 °C 0.05 0.1 0.2 2 5 10 0.5 1 Collector Current I C (A) I C/ I B= 3 5 2 Tc = –25°C 1 0.5 0.2 0.1 20 4 2 5 10 0.2 0.5 1 Collector Current I C (A) 20 Fall Time vs. Base Current 0.8 10 I C= 6 A Fall Time t f (µs) Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Base Current 8A 5 75 °C 25 °C 10 A Tc = 25°C 0 0.1 0.2 0.5 1 Base Current 2 I B (A) 5 10 0.6 I CP = 8 A f H = 64 kHz Tc = 25°C 0.4 0.2 0 0.6 1.0 1.4 1.8 2.2 2.6 Base Current I B1 (A) 3.0 2SC5470 Storage Time vs. Base Current Storage Time tstg (µs) 8 6 I CP = 8 A f H = 64 kHz Tc = 25°C 4 2 0 0.6 1.0 1.4 1.8 2.2 2.6 Base Current I B1 (A) 3.0 5 2SC5470 φ 3.2 5.8 Max 5.0 2.7 19.9 ± 0.3 16.0 Max 5.0 ± 0.3 Package Dimensions (Unit: mm) 2.6 1.6 1.4 Max 1.4 Max 21.0 ± 0.5 4.0 3.2 +0.2 0.66 5.45 ± 0.5 +0.2 –0.1 0.9 –0.1 5.45 ± 0.5 Hitachi Code EIAJ JEDEC 6 TO–3PFM — — 2SC5470 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 7