HITACHI 2SC5828

2SC5828
Silicon NPN Epitaxial
VHF/UHF Wide band amplifier
ADE–208–1465(Z)
Rev.0
Nov. 2001
Features
• Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
3
1
2
Note: Marking is “WX–”.
1. Emitter
2. Base
3. Collector
2SC5828
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
5.5
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
80
mA
Collector power dissipation
PC
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical Characteristics
(Ta = 25 °C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15


V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO


0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO


1
µA
VCE = 5.5 V, RBE = Infinite
Emitter cutoff current
IEBO


0.1
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
100
120
150

VCE = 1 V, IC = 5 mA
Collector output capacitance
Cob

0.85
1.15
pF
VCB = 1 V, IE = 0,
f = 1 MHz
Gain bandwidth product
fT
2.5
5.5

GHz
VCE = 1 V, IC = 5 mA
Power gain
PG
11
14

dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF

1.0
1.7
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Rev.0, Nov. 2001, page 2 of 10
2SC5828
Typical Output Characteristics
IC (mA)
20
80
60
Collector Current
Collector Power Dissipation PC (mW)
Collector Power Dissipation Curve
100
40
20
0
50
100
150
200
250
120 µA
16
100 µA
80 µA
12
60 µA
8
40 µA
IB = 20 µA
4
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
DC Current Transfer Ratio vs.
Collector Current
200
20
15
10
5
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
VCE = 1 V
hFE
VCE = 1 V
DC Current Transfer Ratio
IC (mA)
Collector Current
140 µA
Ambient Temperature Ta (°C)
25
0
160 µA
100
0
0.1
1.0
10
Collector Current IC (mA)
100
Rev.0, Nov. 2001, page 3 of 10
2SC5828
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
IE = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
0.5
1.0
1.5
2.0
2.5
1.0
Emitter ground
f = 1 MHz
0.8
0.6
0.4
0.2
0
3.0
0.5
Gain Bandwidth Product vs.
Collector Current
2.0
2.5
3.0
S21 Parameter vs. Collector Current
20
|S21|2 (dB)
VCE = 1 V
f = 1 GHz
16
12
S21 Parameter
fT (GHz)
Gain Bandwidth Product
1.5
Collector to Base Voltage VCB (V)
Collector to Base Voltage VCB (V)
20
1.0
8
4
VCE = 1 V
f = 1 GHz
16
12
8
4
0
0
1
2
5
10
Collector Current
Rev.0, Nov. 2001, page 4 of 10
20
50
IC (mA)
100
1
2
5
10
Collector Current
20
50
IC (mA)
100
2SC5828
Noise Figure vs. Collector Current
Power Gain vs. Collector Current
5
NF (dB)
VCE = 1 V
f = 900 MHz
Noise Figure
(dB)
12
Power Gain
16
PG
20
8
4
VCE = 1 V
f = 900 MHz
4
3
2
1
0
0
1
2
5
10
20
50
Collector Current IC (mA)
100
1
2
5
10
20
50
Collector Current IC (mA)
100
Rev.0, Nov. 2001, page 5 of 10
2SC5828
S11 Parameter vs. Frequency
.8
S21 Parameter vs. Frequency
1
Scale: 8 / div.
90°
1.5
.6
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
180°
0°
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–.6
–.8
–120°
–1.5
–60°
–1
–90°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.06 / div.
.8
1
1.5
.6
60°
120°
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–120°
–60°
–90°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Rev.0, Nov. 2001, page 6 of 10
–.6
–.8
–1.5
–1
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
2SC5828
S Parameter
(VCE = 1 V, IC = 5 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.819
–34.8
15.22
156.8
0.031
71.2
0.921
–20.6
200
0.732
–64.9
12.81
138.1
0.054
59.1
0.776
–35.1
300
0.671
–88.2
10.54
124.7
0.067
51.3
0.642
–45.0
400
0.609
–105.1
8.65
115.3
0.076
47.5
0.542
–50.6
500
0.588
–118.9
7.31
107.9
0.082
46.5
0.471
–54.7
600
0.563
–129.1
6.28
102.6
0.087
46.1
0.417
–57.0
700
0.549
–137.5
5.47
97.8
0.091
46.3
0.379
–58.8
800
0.541
–143.8
4.87
93.6
0.096
47.6
0.350
–60.2
900
0.529
–149.7
4.40
90.2
0.101
48.8
0.329
–61.8
1000
0.537
–154.8
4.01
86.9
0.106
50.3
0.312
–62.9
1100
0.522
–159.4
3.67
84.1
0.111
51.7
0.300
–64.0
1200
0.530
–163.0
3.38
81.1
0.117
53.1
0.290
–65.5
1300
0.523
–166.5
3.15
79.0
0.121
53.8
0.281
–66.9
1400
0.526
–169.7
2.94
76.7
0.126
55.5
0.275
–68.1
1500
0.533
–172.4
2.77
74.1
0.133
56.8
0.269
–69.5
1600
0.521
–175.8
2.61
72.2
0.139
57.7
0.268
–71.0
1700
0.532
–177.9
2.46
70.2
0.145
59.0
0.264
–72.7
1800
0.520
–179.5
2.35
67.9
0.152
60.1
0.263
–74.3
1900
0.530
177.6
2.23
66.0
0.158
60.8
0.261
–76.0
2000
0.533
175.9
2.14
63.9
0.167
61.5
0.261
–77.9
Rev.0, Nov. 2001, page 7 of 10
2SC5828
(VCE = 1 V, IC = 20 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.496
–81.4
34.91
134.4
0.022
62.9
0.680
–47.1
200
0.455
–121.9
22.12
114.3
0.033
59.6
0.438
–67.3
300
0.446
–139.6
15.54
104.5
0.042
62.4
0.316
–77.8
400
0.433
–151.0
11.90
98.8
0.050
65.0
0.251
–84.4
500
0.438
–158.4
9.60
94.4
0.060
67.5
0.213
–89.4
600
0.434
–163.6
8.04
91.2
0.070
68.8
0.187
–93.5
700
0.440
–168.3
6.91
88.4
0.079
70.0
0.170
–96.6
800
0.439
–170.7
6.05
85.7
0.089
70.8
0.159
–100.0
900
0.437
–175.1
6.45
83.6
0.099
70.9
0.152
–103.1
1000
0.446
–176.6
4.92
81.6
0.109
71.4
0.147
–105.3
1100
0.444
–179.5
4.48
79.3
0.120
71.5
0.143
–107.8
1200
0.447
179.3
4.10
77.1
0.130
71.5
0.142
–110.2
1300
0.441
177.3
3.83
75.7
0.139
71.1
0.140
–112.5
1400
0.450
175.1
3.56
74.0
0.149
71.0
0.140
–114.4
1500
0.456
174.1
3.34
72.0
0.159
70.9
0.141
–116.2
1600
0.446
171.8
3.14
70.5
0.169
70.5
0.143
–117.8
1700
0.462
169.9
2.96
68.8
0.179
70.3
0.145
–119.4
1800
0.447
168.8
2.81
67.2
0.190
69.6
0.148
–121.2
1900
0.458
166.4
2.68
65.8
0.198
69.5
0.150
–122.7
2000
0.468
166.7
2.55
64.1
0.210
68.6
0.153
–124.4
Rev.0, Nov. 2001, page 8 of 10
2SC5828
Package Dimensions
As of July, 2001
3-0.2 +0.1
–0.05
0.15 +0.1
–0.05
(0.1)
1.4 ± 0.05
0.45
0.45
(0.1)
0.8 ± 0.1
0.2
0.9 ± 0.1
0.6 MAX
1.2 ± 0.05
0.2
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MFPAK
—
—
0.0016 g
Rev.0, Nov. 2001, page 9 of 10
2SC5828
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Nov. 2001, page 10 of 10
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