HITACHI 2SD1209K

2SD1209(K)
Silicon NPN Epitaxial, Darlington
Application
• Low frequency power amplifier
• Complementary pair with 2SA1193(K)
Outline
TO-92MOD
2
3
1. Emitter
2. Collector
3. Base
1
3
2
1
2SD1209(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1
A
Collector peak current
iC(peak)
2
A
Collector power dissipation
PC
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
60
—
—
V
I C = 0.1 mA, IE = 0
Collector cutoff current
I CEO
—
—
100
µA
VCE = 60 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
100
µA
VEB = 7 V, IC = 0
DC current transfer ratio
hFE
4000
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 500 mA, IB = 0.5 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 500 mA, IB = 0.5 mA*1
Note:
2
1. Pulse test
VCE = 3 V, IC = 0.5 A*1
2SD1209(K)
Area of Safe Operation
Maximum Collector Dissipation Curve
10
iC(peak)
1.0
ms
ms
0.5
=1
0.4
2
10
Collector Current IC (A)
0.8
0.2
0
0.1
10
20
50 100
1.0
2
5
Collector to Emitter Voltage VCE (V)
100
150
50
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
0.4
Ta = 25°C
Pulse
105
16 14
12
10
8
6
0.3
4
0.2
2 µA
0.1
IB = 0
0
3
4
5
1
2
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio hFE
0.5
Collector Current IC (A)
Ta = 25°C
1 Shot Pulse
5
PW
Collector Power Dissipation PC (W)
1.2
75
25
Ta = –25°C
104
VCE = 3 V
Pulse
103
0.5
0.01 0.02 0.05 0.1 0.2
Collector Current IC (A)
1.0
3
Collector to Emitter Saturation Voltage VCE(satj) (V)
2SD1209(K)
Typical Transfer Characteristics
10
VCE = 3 V
Ta = 25°C
Pulse
Collector Current IC (A)
0.5
0.2
0.1
0.05
0.02
2
5
10
0.2
0.5 1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
0.01
0.1
4
Collector to Emitter Saturation
Voltage vs. Collector Current
10
IC = 1000 IB
Pulse
5
2
Ta = –25°C
1.0
0.5
25
0.2
0.1
0.01 0.02
0.05 0.1 0.2
0.5
Collector Current IC (A)
Base to Emitter Saturation Voltage
vs. Collector Current
10
IC = 1000 IB
Pulse
5
2
Ta = –25°C
1.0
25
75
0.5
0.2
0.1
0.01 0.02
75
0.5
0.05 0.1 0.2
Collector Current IC (A)
1.0
1.0
Unit: mm
4.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.5 ± 0.1
10.1 Min
2.3 Max
8.0 ± 0.5
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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