HITACHI 2SD1527

2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
1000
V
Collector to emitter voltage
VCEO
1000
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
1.8
W
25
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SD1527
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
1000
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 800 V, IE = 0
DC current transfer ratio
hFE1
10
—
—
VCE = 5 V, IC = 10 mA
hFE2
10
—
—
VCE = 5 V, IC = 100 mA
Base to emitter voltage
VBE
—
—
1.2
V
VCE = 5 V, IC = 100 mA
Collector to emitter saturation
voltage
VCE (sat)
—
—
5
V
I C = 300 mA, IB = 60 mA
Gain bandwidth product
fT
—
5
—
MHz
VCE = 20 V, IC = 50 mA
Collector output capacitance
Cob
—
5
—
pF
VCB = 100 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve
Area of Safe Operation
TC = 25°C
(50 V, 0.5 A)
20
10
P
C
=
25
W
0.1
DC Operation
(600 V, 0.042 A)
(1,000 V, 0.015 A)
0
2
1.0
Collector current IC (A)
Collector power dissipation Pc (W)
30
50
100
Case temperature TC (°C)
150
0.01
30
100
300
1,000
3,000
Collector to emitter voltage VCE (V)
2SD1527
Base to emitter saturation voltage VBE (sat) (V)
Base to Emitter Saturation Voltage
vs. Collector Current
2
IC/IB = 10
Ta = 25°C
Pulse test
1
0
1
2
5 10 20
50 100 200
Collector current IC (mA)
500
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
100
TC = 25°C
VCE = 10 V
30
VCE = 5 V
10
3
1
2
5
10
20
50
100
Collector current IC (mA)
200
500
3
2SD1527
Gain Bandwidth Product
vs. Collector Current
Gain bandwidth product fT (MHz)
50
VCE = 20 V
Pulse test
20
10
5
2
1.0
0.5
Collector to emitter saturation voltage VCE (sat) (V)
1
4
3
10
30
Collector current IC (mA)
100
Collector to Emitter Saturation Voltage
vs. Collector Current
5
lC/lB = 10
Ta = 25°C
Pulse test
2
1.0
0.5
0.2
0.1
0.05
1
2
5
10
20
50
100
Collector current IC (mA)
200
500
2SD1527
Collector output capacitance Cob (pF)
Collector Output Capacitance
vs. Collector to Base Voltage
100
f = 1 MHz
IE = 0
50
20
10
5
2
1
2
5
10
20
50
100
Collector to base voltage VCB (V)
200
5
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.