2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2651 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector cutoff current I CBO — — 0.1 µA VCB = 300V, IE = 0 I CEO — — 0.1 µA VCB = 300V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 5 V, IC = 0 Base to emitter voltage VBE — — 0.75 V VCE = 6V, I C = 1mA DC current transfer raito hFE 80 — 160 — VCE = 6V, IC = 2mA — — 0.5 V I C = 30mA, IB = 3mA Collector to emitter saturation VCE(sat) voltage 2 0.4 0.6 25°C Ta = 75 °C VCE = 6 V Pulse Test 0.2 0.8 1.0 -25°C Typical Transfer Characteristics 50 100 150 Ambient Temperature Ta (s°C) Maximum Collector Dissipation Curve Main Characteristics 1.5 1.0 0 0 0.5 100 10 1.0 0.1 0.01 Base to Emitter Voltage VBE (V) 10 8 6 4 2 0 60µA 3 2SD2651 50µA Pulse Test Typical Output Characteristics 100µA 80µA 40µA 30µA 20µA IB = 10 µA 10 25°C -25°C DC Current Transfer Ratio vs. Collector Current Ta = 75°C VCE = 6 V Pulse Test 1.0 Collector Current IC (mA) 100 20 40 60 80 100 Collector to emitter voltage VCE (V) 1 0.1 10 100 1,000 Collector Current IC (mA) DC Current Transfer Ratio hFE Collector Dissipation PC (W) Collector Current IC (mA) 2SD2651 10 1,000 IC/IB = 10 Pulse Test 1.0 Gain Bandwidh Product fT (MHz) Collector to Emitter saturation Voltage VCE (sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current Ta = 75°C 25°C -25°C 0.1 0.01 0.1 1.0 10 VCE = 6 V 100 10 1 0.1 100 Collector Output Capacitance Cob (pF) Collector Current IC (mA) 100 1.0 10 Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 10 1.0 0.1 0.1 1.0 10 Collector to Base Voltage VCB (V) 4 Gain Bandwidh Product vs. Collector Current 100 100 2SD2651 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SD2651 Cautions 1. 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