HITACHI 2SH11

ADE–208–274 (Z)
2SH11
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
TO–220AB
High speed power switching
Features
2
• High speed switching
• Low on saturation voltage
1
1
3
2
Ratings
Unit
3
1. Gate
2. Collector
3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
———————————————————————————————————————————
Collector to emitter voltage
VCES
600
VGES
±20
IC
10
ic(peak)
20
V
———————————————————————————————————————————
Gate to emitter voltage
V
———————————————————————————————————————————
Collector current
A
———————————————————————————————————————————
Collector peak current
A
———————————————————————————————————————————
Collector dissipation
PC*
50
Tj
150
Tstg
–55 to +150
W
———————————————————————————————————————————
Channel temperature
°C
———————————————————————————————————————————
Storage temperature
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1
2SH11
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to emitter breakdown
voltage
V(BR)CES
600
—
—
V
IC = 100 µA, VGE = 0
———————————————————————————————————————————
Zero gate voltage collector
current
ICES
—
—
0.5
mA
VCE = 600 V, VGE = 0
———————————————————————————————————————————
Gate to emitter leak current
IGES
—
VGE(off)
3.0
VCE(sat)1
—
—
±1
µA
VGE = ±20 V, VCE = 0
———————————————————————————————————————————
Gate to emitter cutoff current
—
5.0
V
IC = 1 mA, VCE = 10 V
———————————————————————————————————————————
Collector to emitter saturation
voltage
2.0
—
V
IC = 5 A, VGE = 15 V
———————————————————————————————————————————
Collector to emitter saturation
voltage
VCE(sat)2
—
2.6
3.3
V
IC = 10 A, VGE = 15 V
———————————————————————————————————————————
Input capacitance
Cies
—
1000
—
pF
VCE = 10 V, VGE = 0,
f = 1 MHz
———————————————————————————————————————————
Switching time
tr
—
ton
—
tf
—
toff
—
75
—
————————————————
150
—
————————————————
300
600
————————————————
450
900
ns
IC = 10 A,
RL = 30 Ω,
VGE = ±15 V
Rg = 50 Ω
———————————————————————————————————————————
2
2SH11
Maximum Safe Operation Area
Power vs. Temperature Derating
100
s
I C (A)
s(1
0m
sh
0.1
ot)
Collector Current
0µ
1
=1
20
DC
(T Op
c= e
25 ratio
°C n
)
s
1m
40
10
PW
Collector Dissipation
60
10
Pc (W)
80
Ta = 25 °C
0.01
0
50
100
Case Temperature
150
Tc (°C)
200
1
Reverse Bias SOA
20
1
0.1
0.01
I C (A)
10
16
Collector Current
Collector Current
I C (A)
100
12
Typical Output Characteristics
V GE = 15 V
12 V
Pulse Test
Ta = 25 °C
10 V
8
8V
4
6V
Tc = 25 °C
0
200
400
600
800
Collector to Emitter Voltage V CE (V)
10
100
1000
Collector to Emitter Voltage V CE (V)
0
2
4
6
8
10
Collector to Emitter Voltage V CE (V)
3
2SH11
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Typical Transfer Characteristics
20
Collector Current
12
Collector to Emitter Saturation Voltage
V CE(sat) (V)
I C (A)
16
10
25 °C
75 °C
Tc = –25 °C
8
4
0
Pulse Test
V CE = 10 V
4
8
12
Gate to Emitter Voltage
16
20
V GE (V)
8
6
2
Pulse Test
0
C (pF)
Tc =75 °C
5
25 °C
2
–25 °C
1
0.5
4
10000
Pulse Test
VGE = 15 V
10
4
8
12
Gate to Emitter Voltage
16
20
V GE (V)
Typical Capacitance vs.
Collector to Emitter Voltage
Capacitance
Collector to Emitter Saturation Voltage
V CE(sat) (V)
20
3A
4
Collector to Emitter Saturation Voltage
vs. Collector Current
50
I C = 10 A
5A
1000
100
V GE = 0
f = 1 MHz
Cies
Coes
Cres
2
5
10
1
Collector Current I C (A)
20
10
0
10
20
30
40
50
Collector to Emitter Voltage V CE (V)
2SH11
Dynamic Input Characteristics
Switching Characteristics
20
12
300
V GE
8
200
VCC = 400 V
300 V
200 V
100
0
I C = 10 A
8
16
24
32
Gate Charge Qg (nc)
4
500
t (ns)
V CE
16
Switching Time
400
VCC = 400 V
300 V
200 V
1000
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage VCE (V)
500
tf
200
td(on)
50
10
0.2
Switching Characteristics
Switching Characteristics
500
1000
tf
200
td(off)
100
tr
td(on)
20
10
5
I C = 10 A
R L = 30 Ω
V GE = ±15 V
10
50 100
Gate Resistance Rg ( Ω)
500
Switching Time
Switching Time
t (ns)
2000
t (ns)
1000
50
V CC = 300 V
V GE = ±15 V
Rg = 50 Ω
Tc = 25 °C
1
2
10 20
0.5
5
Collector Current I C (A)
tr
20
0
40
td(off)
100
I C = 10 A
R L = 30 Ω
V GE = ±15 V
Rg = 50 Ω
500
200
tf
td(off)
100
tr
50
td(on)
20
–25
0
25
50
75
100
Case Temperature Tc (°C)
125
5
2SH11
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
1
D=1
0.5
0.3
0.2
0.1
0.1
0.03
2
0.0
PCM
.01
0
1
0.01
10 µ
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 2.5 °C/W, Tc = 25 °C
0.05
lse
u
tP
PW
T
PW
o
sh
T
100 µ
1m
10 m
Pulse Width
6
D=
100 m
PW (S)
1
10
2SH11
Package Dimensions
0.1
f 3.6 +– 0.08
4.8 max
1.5 max
18.5 ±0.5
15.3 max
11.5 max
9.8 max
7.6 min
6.3 min
3.0max
1.27
• TO–220AB
Unit : mm
0.76 ±0.1
2.5 ±0.5
5.1 ±0.5
12.7 min
7.8 ±0.5
1.5 max
0.5
2.7 max
Hitachi Code TO–220AB
SC–46
EIAJ
—
JEDEC
7
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