2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate 2. Drain G 3. Source S 2SJ175 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –10 A –40 A –10 A 25 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SJ175 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V Static drain to source on state resistance RDS(on) — 0.13 0.18 Ω ID = –5 A, VGS = –10 V* — 0.18 0.25 ID = –5 A, VGS = –4 V* 1 Forward transfer admittance |yfs| 4.0 6.5 — S ID = –5 A, VDS = –10 V* Input capacitance Ciss — 900 — pF VDS = –10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 460 — pF Reverse transfer capacitance Crss — 130 — pF Turn-on delay time td(on) — 8 — ns Rise time tr — 65 — ns Turn-off delay time td(off) — 170 — ns Fall time tf — 105 — ns Body to drain diode forward voltage VDF — –1.1 — V IF = –10 A, VGS = 0 Body to drain diode reverse recovery time trr — 200 — ns IF = –10 A, VGS = 0, diF/dt = 50 A/µs Note 1 1 ID = –5 A, VGS = –10 V, RL = 6 Ω 1. Pulse test See characteristic curves of 2SJ172 3 2SJ175 Power vs. Temperature Derating Channel Dissipation Pch (W) 30 20 10 0 50 100 Case Temperature TC (°C) 150 Maximum Safe Operation Area –100 10 µs 0 10 s m C m s O (1 ) n = ) °C 25 –0.3 (T C Operation in this area is limited by RDS(on) sh ot tio ra pe –3 –1.0 10 1 = µs PW –10 D Drain Current ID (A) –30 Ta = 25°C Normalized Transient Thermal Impedance γS (t) –0.1 4 –10 –30 –100 –0.3 –1.0 –3 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 TC = 25°C 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 5.0°C/W, TC = 25°C 0.1 0.1 0.03 0.05 PDM 0.02 0.01 lse Pu hot 1S 0.01 10 µ T 100 µ 1m 10 m 100 m Pulse Width PW (s) D = PW T PW 1 10 2SJ175 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5