2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 • • • • Low on–resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter 3 2, 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SJ246 L , 2SJ246 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.12 0.17 Ω ID = –4 A VGS = –10 V ———————————————————————— — 0.21 0.31 Ω ID = –4 A VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S VDS = –10 V ID = –4 A ——————————————————————————————————————————— Input capacitance Ciss — 660 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 465 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 180 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns VGS = –10 V ———————————————————————————————— Rise time tr — 55 — ns ———————————————————————————————— Turn–off delay time td(off) — 135 — ns ID = –4 V RL = 7.5 Ω ———————————————————————————————— Fall time tf — 135 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — –1.2 — V IF = –7 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 90 — µs IF = –7 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— 2SJ246 L , 2SJ246 S Maximum Safe Operation Area Power vs. Temperature Derating –50 –30 I D (A) 30 20 10 10µs 100µs –10 PW DC –1 1 = m s 10 Op m s( 1 er –3 Drain Current Power Dissipation Pch (W) 40 at ion ot ) (T c= Operation in this area is limited by R DS(on) sh 25 °C ) –0.3 Ta = 25°C 0 50 100 Case Temperature 150 Tc (°C) 200 –0.1 –0.3 –1 –3 –10 –30 –50 Drain to Source Voltage V DS (V) Typical Output Characteristics –6 –5 V –6 V Tc = –25°C Pulse test –10V –3.5 V (A) –4 V ID –8 Typical Transfer Characteristics –10 Drain Current Drain Current ID (A) –10 –4 –3 V –2 –8 Pulse test –6 VDS = –10 V 25°C 75°C –4 –2 VGS = –2.5 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 2SJ246 L , 2SJ246 S Pulse test –1.6 –1.2 Static Drain to Source on State Resistance R DS (on) (Ω ) –2.0 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse test 2 1 0.5 I D = –5 A –0.8 VGS = –4 V 0.2 –0.4 Static Drain to Source on State Resistance R DS (on) (Ω ) 0 –1 A –2 A –10 V 0.1 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 0.05 –0.1 10 Pulse test 0.4 –2 A –1 A VGS = –4 V 0.2 2 –5 A –10 V 0.1 0 –40 –1 Drain Current –10 I D (A) –100 Forward Transfer Admittance vs. Drain Current Pusle test V DS = –10 V 5 I D = –5 A 0.3 Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –25°C Tc = 25°C 75°C 1 –1 A, –2 A 0 40 80 120 160 Case Temperature Tc (°C) 0.5 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 2SJ246 L , 2SJ246 S Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 10000 (pF) 100 C 2000 50 20 di/dt = 50 A/µs, Ta = 25°C VGS = 0, Pulse test –60 –80 –100 0 VGS I D= –7 A –8 –16 –24 –32 Gate Charge Qg (nc) Crss –10 –20 –30 Drain to Source Voltage –40 –50 V DS (V) –12 –16 –20 –40 t (ns) –8 VGS = –10 V, PW = 2 µs, VDD =: –30 V, duty < =1 % 200 Switching Time VDD = –25 V –10 V V GS (V) –4 –40 200 500 Gate to Source Voltage V DS (V) VDD = –10 V –25 V VDS Coss Switching Characteristics 0 –20 Ciss 500 0 Dynamic Input Characteristics 0 1000 100 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) Drain to Source Voltage VGS = 0 f = 1 MHz 5000 Capacitance Reverse Recovery Time t rr (ns) 200 100 td(off) tf 50 tr 20 10 5 –0.1 –0.2 td(on) –0.5 –1 –2 –5 Drain Current I D (A) –10 2SJ246 L , 2SJ246 S Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) Pulse test –8 –6 –10 V –4 –5 V –2 0 0 VGS = 0, 5 V –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 –2.0 V SD (V) 2SJ246 L , 2SJ246 S Normal Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e uls 1 0.03 0.0 PDM P ot D= h 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% Vin –10 V 50Ω V DD . –30 V = . 90% 90% Vout t d (on) 10% 10% tr t d (off) tf