2SJ248 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D 1 2 3 1. Gate 2. Drain 3. Source G S 2SJ248 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –100 V Gate to source voltage VGSS ±20 V Drain current ID –8 A –32 A –8 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 25 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SJ248 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –100 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –250 µA VDS = –80 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1 mA, VDS = –10 V Static drain to source on state RDS(on) — 0.25 0.3 Ω I D = –4 A, VGS = –10 V*1 — 0.3 0.45 Ω I D = –4 A, VGS = –4 V*1 resistance Forward transfer admittance |yfs| 3.0 5.5 — S I D = –4 A, VDS = –10 V*1 Input capacitance Ciss — 880 — pF VDS = –10 V, VGS = 0, Output capacitance Coss — 325 — pF f = 1 MHz Reverse transfer capacitance Crss — 80 — pF Turn-on delay time t d(on) — 12 — ns I D = –4 A, VGS = –10 V, Rise time tr — 47 — ns RL = 2 Ω Turn-off delay time t d(off) — 150 — ns Fall time tf — 75 — ns Body to drain diode forward voltage VDF — –1.0 — V I F = –8 A, VGS = 0 Body to drain diode reverse recovery time t rr — 170 — ns I F = –8 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse test See characteristic curves of 2SJ247 3 2SJ248 Power vs. Temperature Derating Maximum Safe Operation Area –50 –30 10 µ s 10 Drain Current I D (A) 50 100 150 s 0 –0.05 –1 pe ra tio n (T Operation c = in this area 25 is limited by °C ) R DS (on) ) ot sh (1 –0.1 s –0.3 O s m –1 10 C m D –3 1 10 0µ –10 = 20 PW Channel Dissipation Pch (W) 30 Ta = 25°C –3 –10 –30 –100 –300 –1000 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance γ s (t) Noremalized Transient Thermal Impedance vs. Pulse Width 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 5.0°C / W. Tc = 25°C PW D= T P DM 0.05 0.02 0.03 T 0.01 0.01 10 µ 1 shot Pulse 100 µ 1m 10 m Pulse Width PW (S) 4 PW 100 m 1 10 10.0 ± 0.3 2.8 ± 0.2 7.0 ± 0.3 φ 3.2 ± 0.2 Unit: mm 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 4.45 ± 0.3 2.5 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 2.5 ± 0.2 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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