HITACHI 2SJ280L

2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET
Application
LDPAK
High speed power switching
4
4
Features
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
1
•
•
•
•
1
2, 4
2
2
3
3
1
1. Gate
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
–60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
–30
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–120
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–30
A
———————————————————————————————————————————
Avalanche current
IAP***
–30
A
———————————————————————————————————————————
Avalanche energy
EAR***
77
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
2SJ280 L , 2SJ280 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
ID = –10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±200 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
–250
µA
VDS = –50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.25
V
ID = –1 mA, VDS = –10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.033
0.043
Ω
ID = –15 A
VGS = –10 V *
————————————————————————
—
0.045
0.06
Ω
ID = –15 A
VGS = –4 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
17
25
—
S
ID = –15 A
VDS = –10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
3300
—
pF
VDS = 10 V
————————————————————————————————
Output capacitance
Coss
—
1500
—
pF
VGS = 0
————————————————————————————————
Reverse transfer capacitance
Crss
—
480
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
30
—
ns
ID = –15 A
————————————————————————————————
Rise time
tr
—
170
—
ns
————————————————————————————————
Turn–off delay time
td(off)
—
500
—
ns
VGS = –10 V
RL = 2 Ω
————————————————————————————————
Fall time
tf
—
390
—
ns
———————————————————————————————————————————
Body–drain diode forward
voltage
VDF
—
–1.5
—
V
IF = –30 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
recovery time
trr
—
200
—
ns
IF = –30 A, VGS = 0,
diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test
2SJ280 L , 2SJ280 S
Maximum Safe Operation Area
Power vs. Temperature Derating
–500
–300
D (A)
Drain Current I
Drain Current I D (A)
–10
ea
)
ar
on
D
S(
O
is pe
lim ra
ite tion
d in
by t
R his
)
°C
25
–2.5 V
µs
=
–20
s
m
–40
–30
µs
Typical Transfer Characteristics
–50
–3 V
0
Drain Current I D (A)
10
–40
c
(T
150
Typical Output Characteristics
–10 V
–6 V
–4 V
–3.5 V
10
–3
Ta = 25°C
–1
–0.5
–0.1 –0.3
–1
–3 –10 –30 –100
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
–50
=
100
s
m
50
–10
1
0
–30
n
PW atio
r
pe
O
25
10
50
–100
DC
Channel Dissipation Pch (W)
75
Tc = 25°C
–25°C
75°C
Pulse Test
–30 V = –10 V
GS
–20
–10
VGS = –2 V
0
0
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
0
–1
–2
–3
–4
–5
Gate to Source Voltage VGS (V)
2SJ280 L , 2SJ280 S
Drain-Source Saturation Voltage
vs. Gate-Source Voltage
Static Drain-Source on State
Resistance vs. Drain Current
Pulse Test
–1.6
–1.2
I D = –30 A
0.2
0.1
VGS = –4 V
0.05
–20 A
–0.8
–10 V
0.02
–10 A
–0.4
0
0.01
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
Static Drain-Source on State
Resistance vs. Temperature
0.1
Static Drain-Source on State
Resistance RDS(on) ( Ω )
Static Drain-Source on State
Resistance R DS(on) (Ω )
0.5
0.08
Pulse test
0.005
–2
–5 –10 –20
–50 –100 –200
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
100
Forward Transfer Admittance
|y fs | (s)
Drain to Source Saturation Voltage
V DS (on) (V)
–2.0
50
I D = –30 A
20
0.06
VGS = –4 V
–10 A, –20 A
0.04
0.02
0
–40
–10 V
I D = –30 A
–10 A, –20 A
0
40
80
120
160
Case Temperature TC (°C)
Pulse Test
VDS = –10 V
Tc = 25°C
–25°C
75°C
10
5
2
1
–0.5 –1
–2
–5 –10 –20
Drain Current I D (A)
–50
2SJ280 L , 2SJ280 S
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain-Source Voltage
10000
Ciss
C (pF)
200
100
50
20
di/dt = 50 A/ µ s, VGS = 0
Ta = 25°C
10
5
–1
Crss
100
VGS = 0,
f = 1 MHz
10
0
–2
–5 –10 –20
–50 –100
Reverse Drain Current I DR (A)
–60
–80
–100
0
VDD = –10 V
–25 V
–50 V
–4
VDS
–8
VDD = –10 V
–25 V
–50 V
I D = –30 A
40
80
120
160
Gate Charge Qg (nc)
–12
VGS
–16
–20
200
td(off)
Switching Time t (ns)
–40
–40
–50
VDS (V)
1000
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
–20
–10
–20
–30
Drain to Source Voltage
Switching Characteristics
Dynamic Input Characteristics
0
Coss
1000
Capacitance
Reverse Recovery Time t rr (ns)
500
500
tf
200
100
tr
50
td(on)
20
10
–0.5 –1
VGS = –10 V, VDD =: –30 V
PW = 2 µs, duty <
= 1%
–2
–5 –10 –20
Drain Current I D (A)
–50
2SJ280 L , 2SJ280 S
Maxmum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Repetive Avaranche Energy E AR (mJ)
Reverse Drain Current
I DR (A)
–50
Pulse Test
–40
VGS = –10 V
–30
–20
–5 V
0, 5V
–10
0
0
100
I AP = –30 A
VDD = –25 V
duty < 0.1%
Rg >
= 50 Ω
80
60
40
20
0
25
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit and Waveform
VDS
Monitor
Rg
Vin
–15 V
VDSS
E AR = 1 • L • I AP 2 •
2
VDSS – VDD
L
I AP
Monitor
D.U.T
V(BR)DSS
I AP
VDD
ID
50 Ω
0
VDD
VDS
2SJ290
Silicon P-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
•
•
•
•
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
2
1
1. Gate
2. Drain
3. Source
1
2
3
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————–
Drain to source voltage
VDSS
–60
V
———————————————————————————————————————————–
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————–
Drain current
ID
–15
A
———————————————————————————————————————————–
Drain peak current
ID(pulse)*
–60
A
———————————————————————————————————————————–
Body–drain diode reverse drain current
IDR
–15
A
———————————————————————————————————————————–
Avalanche current
IAP***
–15
A
———————————————————————————————————————————–
Avalanche energy
EAR***
19
mJ
———————————————————————————————————————————–
Channel dissipation
Pch**
50
W
———————————————————————————————————————————–
Channel temperature
Tch
150
°C
———————————————————————————————————————————–
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————–
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω