2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Ordering Information Type No. VDSX 2SJ351 –180 V 2SJ352 –200 V 2SJ351, 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ351 Symbol Ratings Unit VDSX –180 V 2SJ352 –200 Gate to source voltage VGSS ±20 V Drain current ID –8 A Body to drain diode reverse drain current I DR –8 A 1 Channel dissipation Pch* 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 V(BR)DSX Typ Max Unit Test conditions –180 — — V I D = –10 mA, VGS = 10 V –200 — — Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) –0.15 — –1.45 V I D = –100 mA, VDS = –10 V Drain to source saturation voltage VDS(sat) — — –12 V I D = –8 A, VGD = 0*1 Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = –3 A, VDS = –10 V*1 Input capacitance Ciss — 800 — pF VGS = 5 V, VDS = –10 V, Output capacitance Coss — 1000 — pF f = 1 MHz Reverse transfer capacitance Crss — 18 — pF Turn-on time t on — 320 — ns Turn-off time t off — 120 — ns Note: VDD = –30 V, ID = –4 A 1. Pulse test 3 2SJ351, 2SJ352 Power vs. Temperature Derating Maximum Safe Operation Area –20 Channel Dissipation 100 50 –5 –2 –1.0 –0.5 2SJ351 0 50 100 Case Temperature –0.2 –5 150 Tc (°C) Typical Output Characteristics 0V = –1 –9 TC = 25°C TC = 25°C –8 –7 –6 Pc h= –5 –4 12 5W –4 –3 –2 VGS = –10 V –7 –6 –6 –5 –4 –4 –3 –2 –2 –2 –1 0 4 –9 –8 –1 0 –500 –8 Drain Current ID (A) VG –6 –10 –20 –50 –100 –200 Drain to Source Voltage VDS (V) –10 S –8 2SJ352 Typical Output Characteristics –10 Drain Current ID (A) Ta = 25°C D Drain Current ID (A) –10 IDmax (Continuous) ot Sh hot 1 S s m s1 10 m ) 0 = ot °C 10 Sh 25 PW = = 1 s TC PW 1 ( = on ti PW era p O C Pch (W) 150 –10 –20 –30 –40 Drain to Source Voltage VDS (V) –50 0 –2 –4 –6 –8 Drain to Source Voltage VDS (V) –10 Drain Current ID (A) Forward Transfer Admittance yfs (S) –10 75 Typical Transfer Characteristics VDS = –10 V °C –10 10 M 20 M Forward Transfer Admittance vs. Frequency –2 –4 –6 –8 Gate to Source Voltage VGS (V) 25 100 k 1M Frequency f (Hz) TC = 25°C VDS = –10 V ID = –2 A 10 k –1.0 –0.8 –0.6 –0.4 –0.2 0 500 200 100 50 20 10 5 –0.1 ton toff –0.5 –1.0 –2 Drain Current ID (A) –5 –2.0 –10 5 2SJ351, 2SJ352 Typical Transfer Characteristics –0.2 Switching Time vs. Drain Current –0.4 –0.8 –1.2 –1.6 Gate to Source Voltage VGS (V) VDS = –10 V 25 °C 25 75 =– C T –8 –6 –4 –2 0 5 1.0 100 m 10 m 1m 0.5 m 2k Drain Current ID (A) Switching Time ton, toff (ns) 25 =– C T 2SJ351, 2SJ352 Waveforms Switching Time Test Circuit Output 10% RL Input Input PW = 50 µs duty ratio = 1% 90% VDD .=. –30V 50 Ω ton toff 90% Output 10% 6 15.6 ± 0.3 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g Cautions 1. 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