HITACHI 2SJ486

2SJ486
Silicon P Channel MOS FET
Low FrequencyPower Switching
ADE-208-512 A
2nd. Edition
Features
• Low on-resistance
R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA)
• 2.5V gate drive devices.
• Small package (MPAK).
Outline
MPAK
3
1
D
2
1. Source
2. Gate
3. Drain
G
S
2SJ486
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
–0.3
A
–0.6
A
1
Drain peak current
I D(pulse)*
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
I D = –10µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
–1.0
µA
VDS = –30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±5.0
µA
VGS = ±6.5V, VDS = 0
Gate to source cutoff voltage VGS(off)
–0.5
—
–1.5
V
I D = –10µA, VDS = –5V
Static drain to source on state RDS(on)
resistance
—
0.5
0.65
Ω
I D = –100mA
RDS(on)
—
VGS = –4V*1
0.7
1.2
Ω
I D = –40mA
VGS = –2.5V*1
Forward transfer admittance
|yfs|
0.4
0.65
—
S
I D = –100mA
VDS = –10V*1
Input capacitance
Ciss
—
45
—
pF
VDS = –10V
Output capacitance
Coss
—
76
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
5.4
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
120
—
ns
VGS = –4V
Rise time
tr
—
340
—
ns
I D = –150mA
Turn-off delay time
t d(off)
—
850
—
ns
RL = 66.6Ω
Fall time
tf
—
550
—
ns
Notes: 1. Pulse test
2. Marking is “ZU–”.
2
2SJ486
Main Characteristics
Power vs. Temperature Derating
I D (A)
–0.01
–0.003
50
100
150
Ambient Temperature
200
–0.001
–0.1
Ta = 25 °C
–0.3
–1
–3
–10
Drain to Source Voltage
Ta (°C)
–30
–100
V DS (V)
Typical Transfer Characteristics
Typical Output Characteristics
–1.0
–1.0
–10 V
–5 V
–0.6
–2 V
–0.4
Ta = 25°C
Pulse Test
–0.2
ID
–2.5 V
Drain Current
–0.8
(A)
–4 V
I D (A)
n
Operation in
this area is
limited by R DS(on)
tio
–0.03
ra
pe
Drain Current
Pch (mW)
–0.1
O
50
=
(1 10
sh ms
ot
)
–0.3
C
100
1 ms
PW
D
Channel Dissipation
150
0
Drain Current
Maximum Safe Operation Area
–1
200
–0.8
–0.6
–0.4
–0.2
V DS = –10 V
Pulse Test
Tc = 75 °C
25 °C
–25 °C
VGS = –1.5 V
0
–0.2
–0.4
–0.6
Drain to Source Voltage
–0.8 –1.0
V DS (V)
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
3
2SJ486
Drain to Source Saturation Voltage
V DS(on) (V)
–0.5
Ta = 25°C
Pulse Test
–0.4
–0.3
–0.2
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25°C
Pulse Test
5
2
1
VGS = –2.5 V
0.5
–0.2 A
–0.1
–0.1 A
–4 V
0.2
0.1
4
–2
–4
–6
Gate to Source Voltage
–8
–10
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.4
–0.1, –0.2 A
1.2
0.8
0.4
0
–40
–0.01 –0.03
V GS (V)
V GS = –2.5 V
–0.1, –0.2 A
–4 V
0
40
80
120
160
Case Temperature Tc (°C)
–0.1
–0.3
Drain Current
–1
–3
–10
I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
5
V DS = –10 V
Pulse Test
2
1
Ta = –25 °C
25 °C
0.5
75 °C
0.2
0.1
0.05
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5
Drain Current I D (A)
–1
2SJ486
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
10000
VGS = 0
f = 1 MHz
300
100
Coss
30
Ciss
Switching Time t (ns)
Capacitance C (pF)
1000
10
Crss
3
3000
300
0
–4
–8
–12
–16
–20
Drain to Source Voltage V DS (V)
tf
tr
t d(on)
100
30
1
t d(off)
1000
10
–0.05
V GS = –4 V, V DD = –10 V
PW = 5 µs, duty < 1 %
–0.1
–0.2
Drain Current
–0.5
I D (A)
–1
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
–1.0
Pulse Test
–0.8
–0.6
V GS = 0, 5 V
–5 V
–0.4
–0.2
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
V SD (V)
5
2SJ486
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
–10 V 50Ω
V DD
= –10 V
Vout
td(on)
6
90%
90%
10%
10%
tr
td(off)
tf
2SJ486
Package Dimensions
1.9
+ 0.2
2.8 – 0.6
0 ~ 0.1
0.65 – 0.3
0.95
0.95
+ 0.10
0.16 – 0.06
+ 0.1
1.5
0.65 – 0.3
+ 0.10
0.4 – 0.05
+ 0.1
Unit: mm
+ 0.3
1.1– 0.1
+ 0.2
0.3
2.8 – 0.1
MPAK
Hitachi Code
SC–59A
EIAJ
TO–236Mod
JEDEC
7
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contact Hitachi’s sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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