2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK1093 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.12 0.15 Ω ID = 5 A, VGS = 10 V * ——————— ——————————– 0.17 ID = 5 A, VGS = 4 V * 0.22 ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 6.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 220 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ———————————————————————————————— Rise time tr — 55 — ns ID = 5 A, VGS = 10 V, RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 140 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body to drain diode forward voltage VDF — 1.2 — V IF = 10 A, VGS = 0 ——————————————————————————————————————————— Body to drain diode reverse recovery time trr — 125 — ns IF = 10 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK970. 2SK1093 Maximum Safe Operation Area Power vs. Temperature Derating 100 Drain Current ID (A) 150 tio n (T C 0.1 0.1 Operation in this area is limited by RDS (on) = t) Normalized Transient Thermal Impedance γs (t) ra 3 1.0 µs 50 100 Case Temperature TC (°C) o Sh s m s (1 m pe 0.3 0 O 10 10 µs 1 10 0 DC = 20 10 10 30 PW Channel Dissipation Pch (W) 30 25 °C ) Ta = 25°C 30 100 0.3 1.0 3 10 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γs (t) · θch–c θch–c = 6.25°C/W, TC = 25°C PDM 0.1 0.1 0.03 0.05 0.02 0.01 lse t Pu ho 0.01 10 µ 1S 100µ D =PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1 10