2SK1296 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1. Gate 2. Drain (Flange) 3. Source 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 120 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 30 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK1296 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.024 0.028 Ω ID = 15 A, VGS = 10 V * ——————————— ——————————– — ID = 15 A, VGS = 4 V * 0.030 0.040 ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 27 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2250 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 1230 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 20 — ns ———————————————————————————————— Rise time tr — 125 — ns ID = 15 A, VGS = 10 V, RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 390 — ns ———————————————————————————————— Fall time tf — 225 — ns ——————————————————————————————————————————— Body to drain diode forward voltage VDF — 1.3 — V IF = 30 A, VGS = 0 ——————————————————————————————————————————— Body to drain diode reverse recovery time trr — 160 — ns IF = 30 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2SK1296 Maximum Safe Operation Area Power vs. Temperature Derating 500 150 0.5 0.1 4V 5V 10 V Pulse Test 3V 20 0 s ra (1 tio Operation in this area is limited by RDS (on) Ta = 25°C n Sh ot (T C = ) 25 °C ) 100 0.3 1.0 3 10 30 Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test 3.5 V 30 10 m pe 50 VGS = 2.5 V 6 2 4 8 10 Drain to Source Voltage VDS (V) 40 Drain Current ID (A) Drain Current ID (A) 40 15 V 10 O Typical Transfer Characteristics Typical Output Characteristics 50 C µs 50 100 Case Temperature TC (°C) 0 1.0 = D 10 5 µs 20 2 0 PW 50 s m 50 10 100 100 10 Drain Current ID (A) 200 1 Channel Dissipation Pch (W) 150 30 20 10 0 75°C TC = 25°C –25°C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1296 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 2.0 1.6 Pulse Test ID = 50 A 1.2 0.8 20 A 0.4 0 10 A 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 0.5 0.1 VGS = 4 V 0.05 0.02 0.005 ID = 20 A 5 A,10 A VGS = 4 V 0.03 0.02 0.01 0 –40 20 A 5 A,10 A VGS = 10 V Pulse Test 0 40 120 80 Case Temperature TC (°C) 5 2 10 20 50 100 Drain Current ID (A) 200 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 0.04 10 V 0.01 Static Drain to Source on State Resistance vs. Temperature 0.05 Pulse Test 0.2 160 50 –25°C TC = 25°C 75°C 20 10 5 2 VDS = 10 V Pulse Test 1.0 0.5 1.0 20 2 10 5 Drain Current ID (A) 50 2SK1296 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 VGS = 0 f = 1 MHz di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 500 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 1000 Coss Crss 100 20 10 10 0.5 2 1.0 5 10 20 Reverse Drain Current IDR (A) 0 50 Switching Characteristics Dynamic Input Characteristics 60 VDS 16 12 VGS 40 0 8 VDD = 50 V 25 V 10 V 4 ID = 30 A 40 80 120 160 Gate Charge Qg (nc) 0 200 td (off) 200 Switching Time t (ns) VDD = 100 V 25 V 50 V 80 20 500 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 100 10 20 30 40 50 Drain to Source Voltage VDS (V) tf 100 tr 50 td (on) 20 10 5 0.5 VGS = 10 V PW = 2 µs, duty < 1 % 1.0 5 2 10 20 Drain Current ID (A) 50 2SK1296 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 Pulse Test 40 10 V 30 5V 20 10 VGS = 0, –5 V Normalized Transient Thermal Impedance γs (t) 0 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 0.1 0.05 0.02 0.1 0.03 0.01 10 µ θch–c (t) = γs (t) · θch–c θch–c = 1.67°C/W, TC = 25°C PDM e uls 0.01 hot P 1S T 100 µ 1m 10 m Pulse Width PW (s) 100 m D =PW T PW 1 10 2SK1296 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Ω Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf