2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features • • • • • Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate 2. Drain 3. Source G S 2SK1318 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 120 V Gate to source voltage VGSS ±20 V Drain current ID 20 A 80 A 1 Drain peak current I D (peak)* Body to drain diode reverse drain current I DR 20 A Channel dissipation Pch*2 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 2 2SK1318 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 120 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Zero gate voltege drain current I DSS — — 250 µA VDS = 100V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) — 0.095 0.12 I D = 10A, VGS = 10V*1 — 0.11 0.16 I D = 10A, VGS = 4V*1 resistance Forward transfer admittance |yfs| 10 17 Å\ S I D = 10A, VDS = 10V*1 Input capacitance Ciss — 1300 Å\ pF VDS = 10V, VGS = 0, Output capacitance Coss — 430 — pF f = 1MHz Reverse transfer capacitance Crss — 60 — pF Turn-on delay time td (on) — 14 — ns I D = 10A, Rise time tr — 70 — ns VGS = 10V, RL = 3 Turn-off delay time td (off) — 210 — ns Fall time tf — 90 — ns Body–drain diode forward voltage VDF — 1.4 — V I F = 20A, VGS = 0 Body–drain diode reverse recovery time trr — 280 — ns I F = 20A, VGS = 0, diF / dt = 50A / µs Note: 1. Pulse test 3 2SK1318 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 60 40 20 DC 10 PW O 1 = pe 10 ra s s n 3 m m tio (1 (T C Operation in this Area Limited by RDS (on) 1 µs µs Drain Current ID (A) 30 0 10 Channel Dissipation Pch (W) 10 = Sh ot ) 25 °C ) 0.3 Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 1 150 Typical Transfer Characteristics Typical Output Characteristics 20 20 4V 3V Pulse Test 12 8 2.5 V 4 VDS = 10 V Pulse Test Drain Current ID (A) Drain Current ID (A) 10 V 16 16 12 4 TC = 25°C 8 4 75¡C VGS = 2.0 V 0 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 4 10 2 6 8 Drain to Source Voltage VDS (V) —25°C 0 2 1 3 4 Gate to Source Voltage VGS (V) 5 5 Pulse Test 4 3 ID = 20 A 2 10 A 1 5A 8 20 4 12 16 Gate to Source Voltage VGS (V) 0 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 0.5 10 V 0.05 0.02 0.01 0.5 ID = 20 A 10 A 5A 0.15 VGS = 4 V 0.1 0.05 10 A 5A VGS = 10 V 0 —40 0 80 120 40 Case Temperature TC (°C) 1 10 2 5 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 0.25 Pulse Test VGS = 4 V 0.1 Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.2 160 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SK1318 100 50 20 VDS = 10 V Pulse Test 25°C Tc = —25°C 75°C 10 5 2 1 0.5 1 2 5 20 10 Drain Current ID (A) 50 5 2SK1318 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10,000 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 di/dt = 50 A/µs VGS = 0, Ta = 25°C Pulse Test 10 5 0.2 Ciss 1,000 Coss 100 10 0.5 2 10 5 1 Reverse Drain Current IDR (A) 0 20 Dynamic Input Characteristics 12 VGS VDS 80 40 8 VDD = 100 V 50 V 25 V ID = 20 A 4 0 0 6 20 60 80 40 Gate Charge Qg (nc) 100 td (off) Switching Time t (ns) 16 50 V 25 V 500 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) VDD = 100 V 120 20 50 10 30 40 Drain to Source Voltage VDS (V) Switching Characteristics 20 200 160 Crss VGS = 0 f = 1 MHz 200 100 VGS = 10 V, PW = 2 µs . duty < = 1%, VDD =. 30 V 50 tf 20 tr td (on) 10 5 0.2 0.5 2 5 10 1 Drain Current ID (A) 20 2SK1318 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 12 VGS = 10 V 15 V 8 VGS = 0, —5 V 4 0 Normalized Transient Thermal Impedance γS (t) Pulse Test 16 1 2.5 0.5 1.5 2 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 0.03 θch - c (t) = γS (t) • θch—c θch - c = 3.57°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.02 0.01 ulse P hot 1S 0.01 10 µ 100 µ T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 7 2SK1318 Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor D.U.T Vin 10% RL Vout 50 Ω Vin 10 V VDD . =. 30 V 90% td (on) 8 10% tr 10% 90% td (off) tf 2SK1318 Package Dimensions 10.0 ± 0.3 7.0 ± 0.3 As of January, 2001 2.5 ± 0.2 Unit: mm 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 4.45 ± 0.3 2.5 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 φ 3.2 ± 0.2 2.8 ± 0.2 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220FM — Conforms 1.8 g 9 2SK1318 Cautions 1. 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