2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1400 Symbol Ratings Unit VDSS 300 V 2SK1400A 350 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 ±30 V 7 A 28 A 7 A Channel dissipation Pch* 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1400, 2SK1400A Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source K1400 breakdown voltage K1400A V(BR)DSS Typ Max Unit Test conditions 300 — — V I D = 10 mA, VGS = 0 350 — — Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage K1400 I DSS — — 250 µA VDS = 240 V, VGS = 0 drain current K1400A VDS = 280 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source K1400 RDS(on) — 0.50 0.70 Ω I D = 4 A, VGS = 10 V *1 — 0.60 0.80 on state resistance K1400A Forward transfer admittance |yfs| 3.0 5.0 — S I D = 4 A, VDS = 10 V *1 Input capacitance Ciss — 635 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 230 — pF f = 1 MHz Reverse transfer capacitance Crss — 40 — pF Turn-on delay time t d(on) — 10 — ns I D = 4 A, VGS = 10 V, Rise time tr — 50 — ns RL = 7.5 Ω Turn-off delay time t d(off) — 60 — ns Fall time tf — 40 — ns Body to drain diode forward voltage VDF — 1.0 — V I F = 7 A, VGS = 0 Body to drain diode reverse recovery time t rr — 240 — ns I F = 7 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test 3 2SK1400, 2SK1400A Maximum Safe Operation Area Power vs. Temperature Derating 50 DS 5 PW 0 = 1 10 n tio ra pe 2 1 0.5 µs µs m s m s (1 = (T C 20 (o n) O i s per lim ati ite on d in by th R is a 40 10 10 10 O Sh ot ) ) °C 25 Drain Current ID (A) 20 C D Channel Dissipation Pch (W) re a 60 0.2 0.1 Ta = 25°C 2SK1400 2SK1400A 0.05 0 50 100 Case Temperature TC (°C) 1 150 Typical Output Characteristics 15 V Drain Current ID (A) 8 Pulse Test 8 5V 6 4 2 0 4 5.5 V 6V 10 V Typical Transfer Characteristics 10 Drain Current ID (A) 10 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 4.5 V 4 12 16 8 Drain to Source Voltage VDS (V) 6 4 75°C 2 4V VGS = 3.5 V 20 VDS = 20 V Pulse Test 0 Ta = 25°C –25°C 2 6 8 4 Gate to Source Voltage VGS (V) 10 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 ID = 10 A 6 4 5A 2 2A 8 4 12 16 Gate to Source Voltage VGS (V) 0 5 Pulse Test 2 1 0.2 0.1 Pulse Test VGS = 10 V 10 A 5A 2A 0.8 0.4 0 –40 0 80 120 40 Case Temperature TC (°C) 1.0 5 10 20 2 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 2.0 1.2 15 V 0.5 Static Drain to Source on State Resistance vs. Temperature 1.6 VGS = 10 V 0.05 0.5 20 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SK1400, 2SK1400A 160 50 20 VDS = 20 V Pulse Test 10 –25°C TC = 25°C 5 75°C 2 1 0.5 0.1 0.2 1 0.5 2 Drain Current ID (A) 5 10 5 2SK1400, 2SK1400A Static Drain-Source on State Resistance vs. Drain Current Body to Drain Diode Reverse Recovery Time 10,000 Ciss 200 Capacitance C (pF) Reverse Recovery Time t rr (ns) 500 100 50 20 1,000 Coss 100 Crss di/dt = 50 A/µs, VGS = 0 Ta = 25°C Pulse Test 10 5 0.2 VGS = 0 V f = 1 MHz 10 0.5 2 10 1 5 Reverse Drain Current IDR (A) 20 0 50 Switching Characteristics Dynamic Input Characteristics 500 20 10 30 40 Drain to Source Voltage VDS (V) 500 20 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 200 16 12 VGS VDS 8 100 200 V 100 V VDD = 50 V 8 ID = 7 A 16 24 32 Gate Charge Qg (nc) 4 0 40 • Switching Time t (ns) 300 0 6 VDD = 50V 100 V 200 V 400 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) • 200 100 td (off) 50 tf tr 20 td (on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1400, 2SK1400A Reverse Drain Current vs. Sourse to Drain Voltage Reverse Dratin Current IDR (A) 10 Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, –5 V 0 2.0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) 0 Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 2.50°C/W, TC = 25°C PDM 0.02 0.03 e 1 0.0 t Puls o h 1S 0.01 10 µ T 100 µ 1m 10 m Pulse Width PW (s) 100 m Switching Time Test Circuit PW D = PW T 1 10 Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Ω Vin 10 V Vout VDD . =. 30 V 10% 10% 90% td (on) tr 10% 90% td (off) tf 7 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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