2SK2059(L), 2SK2059(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID 3 A 6 A 3 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 2 2SK2059(L), 2SK2059(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 100 µA VDS =500 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 3.8 5.0 Ω I D = 1A VGS = 10 V*1 Forward transfer admittance |yfs| 1.2 2.0 — S I D = 1A VDS = 10 V*1 Input capacitance Ciss — 295 — pF VDS = 10 V Output capacitance Coss — 70 — pF VGS = 0 Reverse transfer capacitance Crss — 12 — pF f = 1 MHz Turn-on delay time t d(on) — 8 — ns I D = 1A Rise time tr — 25 — ns VGS = 10 V Turn-off delay time t d(off) — 65 — ns RL = 30Ω Fall time tf — 30 — ns Body to drain diode forward voltage VDF — 0.9 — V I F =3 A, VGS = 0 Body to drain diode reverse recovery time t rr — 220 — ns I F = 3A, VGS = 0, diF / dt = 100 A / µs Note 1. Pulse Test 3 2SK2059(L), 2SK2059(S) Maximum Safe Operation Area Power vs. Temperature Derating 10 ea ar n) (o DS O is per lim at ite ion d in by th R is (1 P ot Sh = (T C ) se ul n io ) °C 25 Drain Current ID (A) s s t ra Ta = 25°C 0.01 50 100 150 Case Temperature 200 1 Tc (°C) Typical Output Characteristics 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 5 10 V 4 5V 4.5 V 3 2 4V 1 4 Drain Current ID (A) Pulse Test Drain Current ID (A) µs m m 0.1 µs 1 10 0.3 0.03 0 pe O 10 C 20 1 0 = 30 D Channel Dissipation 3 10 10 PW Pch (W) 40 VDS = 20 V Pulse Test TC = –25°C 25°C 3 75°C 2 1 3.5 V VGS = 3 V 0 4 10 30 40 20 50 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 12 ID = 2 A 8 1A 4 0.5 A 0 4 12 16 8 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SK2059(L), 2SK2059(S) 50 Pulse Test 20 5 15 V 2 1 0.5 0.05 0.1 ID = 2 A 1A 8 0.5 A 6 4 2 0 –40 0 80 120 40 Case Temperature TC (°C) 0.2 0.5 1 2 Drain Current ID (A) 5 Forward Transfer Admittance vs. Drain Current 10 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test VGS = 10 V 10 160 5 2 VDS = 20 V Pulse Test 1 0.5 TC = 25°C 25°C 75°C 0.2 0.1 0.05 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 5 2SK2059(L), 2SK2059(S) Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 1,000 200 100 50 20 di/dt = 100 A/µs, VGS = 0 Ta = 25°C, Pulse Test 100 Coss 10 Crss 10 5 0.05 1 0.1 0.2 0.5 1 2 Reverse Drain Current IDR (A) 0 5 20 10 30 40 Drain to Source Voltage VDS (V) 8 VGS VDD = 400 V 250 V 100 V 100 4 ID = 2 A 0 6 4 12 16 8 Gate Charge Qg (nc) 20 Switching Time t (ns) 200 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 16 VDD = 100 V 250 V 400 V 12 300 0 500 20 VDS 50 Switching Characteristics Dynamic Input Characteristics 500 400 VGS = 0 f = 1 MHz Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 500 . VGS = 10 V, VDD =. 30 V < PW = 2 µs, duty = 1% 200 td (off) 100 50 tf tr 20 td (on) 10 5 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 2SK2059(L), 2SK2059(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 5 Pulse Test 4 3 2 1 5 V, 10 V Normalized Transient Thermal Impedance γS (t) 0 VGS = 0,–5 V 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 0.625°C/W, TC = 25°C 0.1 0.03 PDM 0.02 0.01 se Pul hot S 1 0.01 10 µ T 100 µ 1m 10 m Pulse Width PW (s) PW 100 m Switching Time Test Circuit D = PW T 1 10 Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Ω Vin 10 V Vout VDD . =. 30 V 10% 10% 90% td (on) tr 10% 90% td (off) tf 7 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 Unit: mm 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. 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