HITACHI 2SK2096

2SK2096
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-3P
D
1
G
2
S
3
1. Gate
2. Drain
(Flange)
3. Source
2SK2096
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
45
A
180
A
45
A
45
A
173
mJ
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2096
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.25
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.018
0.022
Ω
I D = 25 A
VGS = 10 V*1
—
0.023
0.028
Ω
I D = 25 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
25
37
—
S
I D = 25 A
VDS = 10 V*1
Input capacitance
Ciss
—
3530
—
pF
VDS = 10 V
Output capacitance
Coss
—
1480
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
33
—
ns
I D = 25 A
Rise time
tr
—
160
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
450
—
ns
RL = 1.5 Ω
Fall time
tf
—
230
—
ns
Body to drain diode forward
voltage
VDF
—
1.3
—
V
I F = 45 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
130
—
ns
I F = 45 A, VGS = 0,
diF / dt = 50 A / µs
Note
1. Pulse Test
See characteristic curve of 2SK1911.
3
2SK2096
Power vs. Temperature Derating
Maximum Safe Operation Area
0.3
1
I D (A)
Drain Current
Repetive Avalanche Energy E AR (mJ)
200
I AP = 45 A
V DD = 25 V
duty < 0.1 %
Rg > 50 Ω
120
80
40
0
25
50
75
100
125
Channel Temperature Tch (°C)
4
°C
Ta = 25 °C
Maximun Avalanche Energy vs.
Channel Temperature Derating
160
25
)
3
10
Drain to Source Voltage
Tc (°C)
=
t)
Case Temperature
200
c
ho
150
0.5
0.1
(T
Operation in
this area is
limited by R DS(on)
s
(1
100
tio
s
m
3
s
m
50
ra
n
1
0
O
pe
30
µs
C
10
µs
0
D
10
40
100
1
80
10
120
10
=
Channel Dissipation
500
300
PW
Pch (W)
160
150
30
V DS (V)
100
2SK2096
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Avalanche Test Circuit and Waveform
V DS
Monitor
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
5
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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