HITACHI 2SK216

2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
Features
•
•
•
•
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
TO-220AB
D
1
2
3
1. Gate
2. Source
(Flange)
3. Drain
G
S
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK213
Symbol
Ratings
Unit
VDSX
140
V
2SK214
160
2SK215
180
2SK216
200
Gate to source voltage
VGSS
±15
V
Drain current
ID
500
mA
Body to drain diode reverse drain current
I DR
500
mA
Channel dissipation
Pch
1.75
W
Pch*
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
1
Note:
1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
V(BR)DSX
140
—
—
V
I D = 1 mA, VGS = –2 V
Drain to source
2SK213
breakdown voltage
2SK214
160
—
—
V
2SK215
180
—
—
V
2SK216
200
—
—
V
Gate to source breakdown
voltag
V(BR)GSS
±15
—
—
V
I G = ±10 µA, VDS = 0
Gate to source voltage
VGS(on)
0.2
—
1.5
V
I D = 10 mA, VDS = 10 V *1
Drain to source saturation
voltage
VDS(sat)
—
—
2.0
V
I D = 10 mA, VGD = 0 *1
Forward transfer admittance
|yfs|
20
40
—
mS
I D = 10 mA, VDS = 20 V *1
Input capacitance
Ciss
—
90
—
pF
I D = 10 mA, VDS = 10 V,
Reverse transfer capacitance
Crss
—
2.2
—
pF
f = 1 MHz
Note:
2
1. Pulse test
2SK213, 2SK214, 2SK215, 2SK216
Typical Output Characteristics
Power vs. Temperature Derating
500
40
20
TC = 25°C
400
2.5
300
2.0
200
1.5
100
0
150
Typical Transfer Characteristics
Typical Output Characteristics
30
20
0.8
0.7
0.6
0.5
0.4
10
0.3
0.2
400
VDS = 20 V
TC
40
TC = 25°C
500
Drain Current ID (mA)
50
4
8
16
20
12
Drain to Source Voltage VDS (V)
25°
C
25
75
50
100
Case Temperature TC (°C)
1.0
VGS = 0.5 V
=–
0
Drain Current ID (mA)
3.5
3.0
Drain Current ID (mA)
Channel Dissipation Pch (W)
60
300
200
100
VGS = 0.1V
0
60
20
40
80
100
Drain to Source Voltage VDS (V)
0
3
1
2
4
Gate Source Voltage VGS (V)
5
3
2SK213, 2SK214, 2SK215, 2SK216
80
VDS = 20 V
TC =
–25
°C
25
75
Drain Current ID (mA)
100
Forward Transfer Admittance yfs (mS)
Typical Transfer Characteristics
60
40
20
1.2
0.4
0.8
1.6
Gate Source Voltage VGS (V)
Forward Transfer Admittance yfs (mS)
0
4
2.0
Forward Transfer Admittance
vs. Drain Current
200
100
50
20
10
TC = 25°C
VDS = 20 V
5
2
5
20
10
50 100 200
Drain Current ID (mA)
Forward Transfer Admittance
vs. Frequency
500
100
10
TC = 25°C
VDS = 20 V
ID = 10 mA
1.0
0.1
0.05
5 k 10 k
1M
10 M
100 k
Frequency f (HZ)
50 M
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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