2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D 1 G 2 S 3 1. Gate 2. Source (Flange) 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 Symbol Ratings Unit VDSX 180 V 2SK2221 200 Gate to source voltage VGSS ±20 V Drain current ID 8 A Body to drain diode reverse drain current I DR 8 A 1 Channel dissipation Pch* 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note 1. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Drain to source 2SK2220 breakdown voltage 2SK2221 Symbol Min Typ Max Unit Test conditions V(BR)DSX 180 — — V I D = 10 mA, VGS = –10 V 200 — — Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V I D = 100 mA VDS = 10 V Drain to source saturation voltage VDS(sat) — — 12 V I D = 8 A, VGD = 0 V*1 Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A VDS = 10 V*1 Input capacitance Ciss — 600 — pF VGS = –5 V Output capacitance Coss — 800 — pF VDS = 10 V Reverse transfer capacitance Crss — 8 — pF f = 1 MHz Turn-on time t on — 250 — ns VDD = 30 V Turn-off time t off — 90 — ns ID = 4 A Note 2 1. Pulse Test 2SK2220, 2SK2221 Power vs. Temperature Derating Ta = 25°C s (1 0 t) (1 t) = (T C o Sh n ) °C 25 1.0 o Sh s m tio ra Drain Current ID (A) m 10 pe 2 0.5 2SK2220 0 50 100 Case Temperature 9 8 VGS = 10 V 8 5 Tc (°C) 7 Drain Current ID (A) 8 Pch = 125 W 6 5 4 4 3 2 6 4 6 4 3 2 1 1 10 30 40 20 Drain to Source Voltage VDS (V) 8 9 5 2 0 VGS = 10 V TC = 25°C 7 2 0 10 20 50 100 200 500 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 TC = 25°C 6 2SK2221 0.2 150 Typical Output Characteristics 10 Drain Current ID (A) 10 = O 50 5 = 100 PW 10 C D Channel Dissipation Maximum Safe Operation Area 20 PW Pch (W) 150 50 0 2 6 8 4 Drain to Source Voltage VDS (V) 0 10 3 2SK2220, 2SK2221 Typical Transfer Characteristics Typical Transfer Characteristics 10 4 2 4 2 6 8 Gate to Source Voltage VGS (V) 10 °C 75 25 0 Forward Transfer Admittance vs. Frequency 1.0 0.1 TC = 25°C VDS = 10 V ID = 2 A 0.01 0.001 0.0005 2k 0.8 0.4 1.2 1.6 Gate to Source Voltage VGS (V) 2.0 Switching Time vs. Drain Current 500 5 Switching Time t on, t off (ns) Forward Transfer Admittance yfs (S) =– 0.4 0.2 0 4 C 0.6 T Drain Current ID (A) 75 VDS = 10 V 25 C 6 0.8 25 =– 25° VDS = 10 V TC Drain Current ID (A) 8 1.0 10 k 1M 100 k Frequency f (Hz) 10 M 20 M t on 200 100 50 t off 20 10 5 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 10 2SK2220, 2SK2221 Waveforms Switching Time Test Circuit 90% Output RL Input Input 10% t on PW = 50 µs duty ratio = 1% 10% 30 V 50 Ω t off Output 90% 5 15.6 ± 0.3 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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