HITACHI 2SK2586

2SK2586
Silicon N-Channel MOS FET
ADE-208-358 C
4th. Edition
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
R DS(on) = 7 m typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO-3P
D
1
G
2
S
3
1. Gate
2. Drain
(Flange)
3. Source
2SK2586
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
60
A
240
A
60
A
45
A
174
mJ
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
ID*
2
I D(pulse)*
I DR*
2
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
125
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2586
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
100
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
7
10
mΩ
I D = 30 A
VGS = 10 V*1
—
10
16
mΩ
I D = 30 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
35
60
—
S
I D = 30 A
VDS = 10 V*1
Input capacitance
Ciss
—
3550
—
pF
VDS = 10 V
Output capacitance
Coss
—
1760
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
35
—
ns
I D = 30 A
Rise time
tr
—
260
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
480
—
ns
RL = 1.0 Ω
Fall time
tf
—
370
—
ns
Body to drain diode forward
voltage
VDF
—
0.94
—
V
I F = 60 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
140
—
ns
I F = 60 A, VGS = 0
diF / dt = 50 A / µs
Note:
1. Pulse Test
See characteristic curves of 2SK2529.
3
2SK2586
Power vs. Temperature Derating
I D (A)
500
100
PW
50
20
10
µs
m
m
s
(1
sh
ot
)
c
(T
=
)
°C
25
Operation in
this area is
limited by R DS(on)
µs
s
n
5
=
tio
ra
10
1
pe
50
0
O
100
10
10
200
Drain Current
150
Maximum Safe Operation Area
C
D
Channel Dissipation
Pch (W)
200
2
1
0
50
100
Case Temperature
150
Ta = 25 °C
0.5
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.0 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
ho
1s
100 µ
PW
T
PW
T
1m
10 m
Pulse Width
4
D=
100 m
PW (S)
1
10
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.