HITACHI 2SK3134S

2SK3134(L), 2SK3134(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-721B (Z)
3rd. Edition
February 1999
Features
• Low on-resistance
R DS(on) = 4 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
D
1
1
G
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK3134(L),2SK3134(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
75
A
300
A
75
A
35
A
122
mJ
100
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP
Note 1
Note 3
EAR
Note 3
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK3134(L),2SK3134(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±20 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
I D = 1 mA, VDS = 10 V Note 1
Static drain to source on state
RDS(on)
—
4.0
5.0
mΩ
I D = 40 A, VGS = 10 V Note 1
—
5.5
8.5
mΩ
I D = 40 A, VGS = 4 V Note 1
resistance
Forward transfer admittance
|yfs|
50
80
—
S
I D = 40 A, VDS = 10 V Note 1
Input capacitance
Ciss
—
6800
—
pF
VDS = 10 V
Output capacitance
Coss
—
1550
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Total gate charge
Qg
—
130
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
16
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
30
—
nc
I D = 75 A
Turn-on delay time
t d(on)
—
50
—
ns
VGS = 10 V, ID = 40 A
Rise time
tr
—
370
—
ns
RL = 0.25 Ω
Turn-off delay time
t d(off)
—
550
—
ns
Fall time
tf
—
380
—
ns
Body–drain diode forward voltage
VDF
—
1.05
—
V
Body–drain diode reverse
t rr
—
80
—
ns
recovery time
Note:
I F = 75 A, VGS = 0
I F = 75 A, VGS = 0
diF/ dt = 5 A/ µs
1. Pulse test
3
2SK3134(L),2SK3134(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
I D (A)
120
Drain Current
Channel Dissipation
Pch (W)
160
80
40
10
300
PW
100
DC
30
10
10
=
10
1
µs
0µ
s
m
s
Op ms
(1
e
s
(T rati
c = on hot
)
25
°C
)
Operation in
3 this area is
limited by R DS(on)
1
0.3
0
50
100
150
Case Temperature
0.1 Ta = 25°C
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
200
Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
Pulse Test
3V
ID
4V
2.5 V
60
40
20
0
4
VGS = 10 V
5V
(A)
80
100
Drain Current
Drain Current
I D (A)
100
2
4
6
Drain to Source Voltage
8
10
V DS (V)
80
V DS = 10 V
Pulse Test
60
40
25°C
20
0
75°C
Tc = –25°C
1
2
3
Gate to Source Voltage
4
5
V GS (V)
2SK3134(L),2SK3134(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
0.4
0.3
I D = 50 A
0.2
0.1
20 A
10 A
Drain to Source On State Resistance
R DS(on) (mΩ )
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4 V
3
10 V
1
0.3
0.1
12
4
8
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I D = 50 A
8
10, 20 A
4V
4
0
–50
VGS = 10 V
10, 20, 50 A
0
50
100
150
200
Case Temperature Tc (°C)
1
3
30
10
Drain Current
100 300 1000
I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) (mΩ )
0
500
200
V DS = 10 V
Pulse Test
100
50
Tc = –25 °C
20
10
5
2
25 °C
75 °C
1
0.5
0.1
0.3
1
3
10
30
Drain Current I D (A)
100
5
2SK3134(L),2SK3134(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
30000
VGS = 0
f = 1 MHz
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
10000
3000
Coss
1000
Crss
300
20
10
0.1
100
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
VDS = 20 V
10 V
5V
30
20
10
0
V DS
16
12
8
VDS = 20 V
10 V
5V
80
160
240
320
Gate Charge Qg (nc)
4
0
400
20
30
40
50
Switching Characteristics
t d(off)
500
Switching Time t (ns)
V GS
40
V GS (V)
I D = 75 A
1000
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
20
10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
6
Ciss
tf
200
100
50
20
tr
t d(on)
V GS = 10 V, V DD = 10 V
PW = 5 µs, duty < 1%
10
2 5 10 20
0.1 0.2 0.5 1
Drain Current I D (A)
50 100
2SK3134(L),2SK3134(S)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
(A)
100
10 V
Reverse Drain Current I F
80
5V
60
V GS = 0, –5 V
40
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
200
I AP = 35 A
V DD = 15 V
duty < 0.1 %
Rg > 50 Ω
160
120
80
40
0
25
V SDF (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
2SK3134(L),2SK3134(S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
ho
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK3134(L),2SK3134(S)
Package Dimensions
1.2 ± 0.2
0.4 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
L type
2.54 ± 0.5
(1.4)
(1.5)
(1.5)
1.27 ± 0.2
3.0 +0.3
–0.5
2.59 ± 0.2
4.44 ± 0.2
8.6 ± 0.3
10.0 +0.3
–0.5
10.2 ± 0.3
1.27 ± 0.2
0.76 ± 0.1
1.3 ± 0.2
11.3 ± 0.5
4.44 ± 0.2
11.0 ± 0.5
1.2 ± 0.2
0.86 +0.2
–0.1
8.6 ± 0.3
10.0 +0.3
–0.5
(1.5)
10.2 ± 0.3
(1.4)
Unit: mm
1.3 ± 0.2
0.1 +0.2
–0.1
2.59 ± 0.2
0.4 ± 0.1
0.86 +0.2
–0.1
2.54 ± 0.5
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
—
9
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