2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting Outline RP8P D 1 3 1 G 2 S Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2 3 1. Gate 2. Source 3. Drain 2SK3390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 17 V Gate to source voltage VGSS ±10 V Drain current ID 1 A 2.5 A Drain peak current ID(pulse) Note1 Note2 Channel dissipation Pch 20 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. PW < 1sec, Tch < 150 °C 2. Value at Tc = 25°C Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current IDSS — — 10 µA VDS = 13.7 V, VGS = 0 Gate to source leak current IGSS — — ±5 µA VGS = ±10V, VDS = 0 Gate to source cutoff voltage VGS(off) 2.2 — 3.0 V ID = 1mA, VDS = 13.7V Input capacitance Ciss — 27.5 — pF VGS = 5V, VDS = 0, f = 1MHz Output capacitance Coss — 10.5 — pF VDS = 13.7V, VGS = 0, f = 1MHz Output Power Pout 6.31 — — W VDS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 mW Added Efficiency ηadd 60 — — % VDS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 mW Rev.0, Aug. 2001, page 2 of 7 2SK3390 Maximum Channel Power Dissipation Curve Typical Output Characteristics 5 I D (A) 40 30 Drain Current Channel Power Dissipation Pch (W) Main Characteristics 20 10 4 50 100 150 Case Temperature 7V 3 6V 2 5V 1 0 200 Tc (°C) VGS = 4 V Tc = 75°C 25°C - 25°C 2 1.5 1 0.5 V DS = 13.7 V Pulse Test 0 2 3 4 5 Gate to Source Voltage 6 7 V GS (V) Forward Transfer Admittance |y fs | (S) 2.5 2 4 6 Drain to Source Voltage 8 10 V DS (V) Forward Transfer Admittance vs. Drain Current Typical Transfer Characteristics I D (A) 8V 9V Pulse Test 0 Drain Current 10 V 10 3 25°C Tc = - 25°C 1 0.3 75°C 0.1 0.03 V DS = 13.7 V Pulse Test 0.01 0.01 0.03 0.1 0.3 1 3 10 Drain Current I D (A) Rev.0, Aug. 2001, page 3 of 7 2SK3390 Drain to Source Saturatioin Voltage vs. Drain Current 3 Gate to Source Cutoff Voltage V GS(off) (V) Drain to Source Saturation Voltage V DS(sat) (V) 10 25°C 1 75°C 0.3 0.1 Tc = - 25°C 0.03 0.01 VGS = 10 V Pulse Test 0.003 0.001 1 3 0.01 0.03 0.1 0.3 Drain Current I D (A) Gate to Source Cutoff Voltage vs. Ambient Temperature 10 3.6 3.2 2.8 ID = 0.1 mA 2.0 V DS = 13.7 V 1.6 - 25 0 25 50 75 Ambient Temperature 100 125 Ta (°C) Output Capacitance vs. Drain to Source Voltage 100 Output Capacitance Coss (pF) 29 Input Capacitance Ciss (pF) 1 mA 2.4 Input Capacitance vs. Gate to Source Voltage 28 27 26 25 24 -10 10 mA V DS = 0 f = 1 MHz -6 -2 2 6 Gate to Source Voltage VGS (V) Rev.0, Aug. 2001, page 4 of 7 10 30 10 3 V GS = 0 f = 1 MHz 1 0.1 0.3 1 3 10 Drain to Source Voltage V DS (V) 30 Pout 3 1 0.3 8 80 ηadd 6 4 0.3 1 3 10 Drain to Gate Voltege V DG (V) 30 V DS = 13.7 V I DO = 0.25 A f = 836 MHz 2 0 0 60 40 V GS = 0 f = 1 MHz 0.1 0.1 100 50 100 150 200 20 250 ηadd (%) 10 10 Output Power, Added Efficiency vs. Input Power Added Efficiency Reverse Transfer Capacitance vs. Drain to Gate Votage Output Power Pout (W) Reverse Transfer Capacitance Crss (pF) 2SK3390 0 Input power Pin (mW) Rev.0, Aug. 2001, page 5 of 7 2SK3390 Package Dimensions As of January, 2001 Unit: mm 5.2 ± 0.15 2.54 ± 0.2 1.0 3.4 ± 0.15 1.1 1.325 ± 0.15 0.2 0.16 +0.1 −0.06 0.6 0.5 +0.1 −0.05 2.0 Max 5.6 +0.7 −0.5 4.5 Max Hitachi Code JEDEC EIAJ Mass (reference value) Rev.0, Aug. 2001, page 6 of 7 RP8P 0.08 g 2SK3390 Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Aug. 2001, page 7 of 7