HITACHI 3SK309

3SK309
GaAs N Channel Dual Gate MES FET
UHF RF Amplifier
ADE-208-472 A
2nd. Edition
Features
• Capable of low voltage operation (VDS = 1.5 to 3 V)
• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
• High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK309
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate 1 to source voltage
VG1S
–4
V
Gate 2 to source voltage
VG2S
–4
V
Drain current
ID
18
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate 1 to cutoff current
I G1SS
—
—
–20
µA
VG1S = –4 V
VG2S = VDS = 0
Gate 2 to cutoff current
I G2SS
—
—
–20
µA
VG2S = –4 V
VG1S = VDS = 0
Gate 1 to source cutoff voltage VG1S(off)
–0.2
—
–1.5
V
VDS = 3 V, VG2S = 0
I D = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
–0.2
—
–1.5
V
VDS = 3 V, VG1S = 0
I D = 100 µA
Zero gate voltege drain current I DSS
25
40
60
mA
VDS = 3 V, VG1S = 0
VG2S = 0
Forward transfer admittance
|yfs|
30
40
—
mS
VDS = 3 V, VG2S = 0
I D = 5 mA, f = 1 kHz
Power gain
PG
18
21
—
dB
VDS = 3 V, VG2S = 0
Noise figure
NF
—
1.25
1.5
dB
I D = 5 mA, f = 900 MHz
Power gain
PG
—
20
—
dB
VDS = 1.5 V, VG2S = 0
Noise figure
NF
—
1.3
—
dB
I D = 3 mA, f = 900 MHz
Note: Marking is “XV–”
2
3SK309
Main Characteristics
Maximum Channel Power
Dissipation Curve
–0.4 V
–0.5 V
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Typical Output Characteristics
20
200
150
100
50
16
–0.6 V
Pulse Test
–0.7 V
12
8
–0.8 V
4
–0.9 V
VG1S = –1 V
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate1 to Source Voltage
VDS = 3 V
Drain Current ID (mA)
16
12
–0.2 V
–0.4 V
–0.6 V
8
4
0
–2.0
20
0V
–0.8 V
VG2S = –1 V
–1.6 –1.2 –0.8
–0.4
0
Gate1 to Source Voltage VG1S (V)
Drain Current ID (mA)
20
1
2
3
4
Drain to Source Voltage VDS (V)
5
Drain Current vs.
Gate2 to Source Voltage
VDS = 3 V
16
0V
–0.2 V
–0.4 V
12
–0.6 V
8
4
0
–2.0
–0.8 V
VG1S = –1 V
–1.6
–1.2
–0.8 –0.4
0
Gate2 to Source Voltage VG2S (V)
3
Forward Transfer Admittance vs.
Gate1 to Source Voltage
100
VDS = 3 V
f = 1 kHz
80
0V
60
–0.2 V
–0.4 V
40
–0.6 V
20
–0.8 V
VG2S = –1 V
0
–1.2
–0.8
–0.4
0
–2.0 –1.6
Gate1 to Source Voltage VG1S (V)
25
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance |y fs | (mS)
3SK309
Forward Transfer Admittance vs.
Drain Current
100
80
60
40
20
0
Power Gain vs. Drain Current
VDS = 3 V
VG2S = 0
f = 1 kHz
2.0
4
8
12
16
Drain Current ID (mA)
20
Noise Figure vs. Drain Current
NF (dB)
20
V DS = 1.5 V
15
Noise Figure
Power Gain
PG (dB)
3V
10
5
1.6
V DS = 1.5 V
1.2
0.8
0.4
V G2S = 0
f = 900 MHz
0
4
4
8
12
16
Drain Current I D (mA)
3V
V G2S = 0
f = 900 MHz
20
0
4
8
12
16
Drain Current I D (mA)
20
3SK309
Power Gain vs.
Drain to Source Voltage
Noise Figure vs.
Drain to Source Voltage
25
2.0
5 mA
1.6
ID = 3 mA
Noise Figure NF (dB)
Power Gain PG (dB)
20
15
10
5
3 mA
1.2
0.8
0.4
VG2S = 0
f = 900 MHz
0
1
3
4
5
2
Drain to Source Voltage VDS (V)
VG2S = 0
f = 900 MHz
6
0
5
0
–1
VG1S is fixed
for ID = 5 mA
at VG2S = 0
VDS = 3 V
f = 900 MHz
–0.8
–0.6 –0.4
–0.2
0
Gate2 to Source Voltage VG2S (V)
Gain Reduction GR (dB)
Power Gain PG (dB)
15
6
50
25
20
2
1
3
4
5
Drain to Source Voltage VDS (V)
Gain Reduction vs.
Gate2 to Source Voltage
Power Gain vs.
Gate2 to Source Voltage
10
ID = 5 mA
40
30
VG1S is fixed
for ID = 5 mA
at VG2S = 0
VDS = 3 V
f = 900 MHz
20
10
0
–1.5
–0.5
0
0.5
1.0
–1.0
Gate2 to Source Voltage VG2S (V)
5
3SK309
S11 Parameter vs. Frequency
.8
1
S21 Parameter vs. Frequency
Scale: 1 / div.
90°
1.5
.6
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.6 .8 1
.4
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Test Condtion: VDS = 3 V , VG2S = 0 V
ID = 5 mA , Zo = 50Ω
100 to 2000 MHz (100 MHz step)
Test Condtion: VDS = 3 V , VG2S = 0 V
ID = 5 mA , Zo = 50Ω
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.01 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condtion: VDS = 3 V , VG2S = 0 V
ID = 5 mA , Zo = 50Ω
100 to 2000 MHz (100 MHz step)
6
–2
–.6
–.8
–1
–1.5
Test Condtion: VDS = 3 V , VG2S = 0 V
ID = 5 mA , Zo = 50Ω
100 to 2000 MHz (100 MHz step)
3SK309
Sparameter (VDS = 3 V, VG2S = 0, ID = 5 mA, Zo = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.999
–2.8
3.29
176.7
0.00167
95.2
0.963
–0.9
200
0.997
–5.9
3.27
173.1
0.00302
89.0
0.963
–2.2
300
0.995
–9.4
3.29
169.0
0.00394
80.5
0.961
–3.5
400
0.992
–12.3
3.26
165.8
0.00506
83.7
0.959
–5.0
500
0.981
–15.2
3.23
161.9
0.00703
80.8
0.957
–6.3
600
0.968
–18.9
3.22
158.3
0.00797
78.1
0.955
–8.0
700
0.956
–21.8
3.20
154.4
0.00911
76.9
0.953
–9.2
800
0.949
–24.5
3.15
151.3
0.0104
77.1
0.949
–10.6
900
0.935
–27.6
3.14
147.4
0.0114
73.2
0.946
–12.0
1000
0.922
–30.7
3.12
143.7
0.0123
72.1
0.942
–13.5
1100
0.912
–33.5
3.06
140.3
0.0137
71.9
0.939
–14.7
1200
0.895
–36.2
3.03
136.7
0.0139
70.8
0.935
–16.0
1300
0.873
–38.7
2.97
133.3
0.0150
68.5
0.931
–17.3
1400
0.860
–41.4
2.93
130.1
0.0161
68.5
0.926
–18.6
1500
0.838
–43.8
2.89
126.9
0.0162
67.2
0.922
–20.2
1600
0.822
–45.6
2.85
123.6
0.0171
66.6
0.918
–21.5
1700
0.807
–48.3
2.83
120.5
0.0178
67.2
0.913
–22.7
1800
0.787
–50.7
2.79
117.4
0.0185
66.0
0.909
–23.8
1900
0.767
–52.4
2.74
114.4
0.0186
64.3
0.905
–25.5
2000
0.756
–55.0
2.69
110.9
0.0190
63.7
0.901
–26.6
7
3SK309
Power Gain, Noise Figure Test Circuit
V G2
VD
1000 pF
1000 pF
47 k
Unit : Resistance ( Ω )
Capacitance (F)
RFC
1k
1000 pF
L3
L1
L4
10 p max
L2
Input
(50 Ω )
10 p max
Output
(50 Ω )
47 k
1000 pF
V G1
L1 to L4 : φ 1 mm copper wire
4
L1 :
6
L3 :
6
6
32
25
L2 :
7
26
5
90° 120°
21
L4 :
7
6
90° 120°
Unit : mm
RFC : 3 turn, 6 mm inside dia ( φ1 mm enameled copper wire)
8
3SK309
Package Dimentions
Unit: mm
1.3
0.65 0.65
+ 0.1
+ 0.1
0.3 – 0.05
0.3 – 0.05
3
0.425
2.0 ±0.2
+ 0.1
0.16 – 0.06
2.1 ±0.3
1.25
2
0 ~ 0.1
1
4
+ 0.1
0.4 – 0.05
0.65
0.6
0.425
+ 0.1
0.3 – 0.05
0.9 ±0.1
0.2
1.25
Hitachi code
EIAJ
JEDEC
CMPAK-4
9
Datasheet Title
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
4
Datasheet Title
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
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: http://www.hitachi-eu.com/hel/ecg
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: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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Electronic components Group
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Germany
Tel: <49> (89) 9 9180-0
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Tel: <44> (1628) 585000
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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