HITACHI 3SK317

3SK317
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
ADE-208-778 (Z)
1st. Edition
Mar. 1999
Features
• Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
• High power gain characteristics ;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
CMPAK-4
2
3
1
4
Note: Marking is “ZR-”.
1. Source
2. Gate1
3. Gate2
4. Drain
3SK317
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
14
V
Gate1 to source voltage
VG1S
±8
V
Gate2 to source voltage
VG2S
±8
V
Drain current
ID
25
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
14
—
—
V
I D = 200 µA
VG1S = VG2S = -3 V
Gate1 to source breakdown
voltage
V(BR)G1SS
±8
—
—
V
I G1 = ±10 µA
VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
±8
—
—
V
I G2 = ±10 µA
VG1S = VDS = 0
Gate1 to source cutoff current
I G1SS
—
—
±100
nA
VG1S = ±6 V
VG2S = VDS = 0
Gate2 to source cutoff current
I G2SS
—
—
±100
nA
VG2S = ±6 V
VG1S = VDS = 0
Gate1 to source cutoff voltage
VG1S(off)
0
0.2
1
V
VDS = 10 V, VG2S = 3 V
I D = 100 µA
Gate2 to source cutoff voltage
VG2S(off)
0
0.3
1
V
VDS = 10 V, VG1S = 3 V
I D = 100 µA
Drain current
I DS(op)
4
8
14
mA
VDS = 6 V, VG1S = 0.75 V
VG2S = 3 V
Forward transfer admittance
|yfs|
20
25
—
mS
VDS = 6 V, VG2S = 3 V
I D = 10 mA , f = 1 kHz
Input capacitance
Ciss
2.4
3.1
3.5
pF
VDS = 6 V, VG2S = 3 V
Output capacitance
Coss
0.8
1.1
1.4
pF
I D = 10 mA , f = 1 MHz
Reverse transfer capacitance
Crss
—
0.021
0.04
pF
Power gain
PG
24
27.6
—
dB
VDS = 6 V, VG2S = 3 V
Noise figure
NF
—
1.0
1.5
dB
I D = 10 mA , f = 200 MHz
Power gain
PG
12
15.6
—
dB
VDS = 6 V, VG2S = 3 V
Noise figure
NF
—
3
4
dB
I D = 10 mA , f = 900 MHz
Noise figure
NF
—
2.7
3.5
dB
VDS = 6 V, VG2S = 3 V
I D = 10 mA , f = 60 MHz
2
3SK317
20
200
Typical Output Characteristics
I D (mA)
1.2 V
150
VG2S= 3 V
Pulse test
16
1.0 V
12
Drain current
Channel power dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
100
50
4
50
100
150
200
0
2
10
4
6
8
Drain to source voltage V DS (V)
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
2.0 V V DS = 6 V
Pulse test
2.5 V
16
1.5 V
12
12
8
Drain current
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
VDS = 6 V
2.5 V
Pulse test
2.0 V
16
1.5 V
(mA)
(°C)
ID
Ambient Temperature Ta
I D (mA)
0.6 V
V G1S = 0.4 V
0
Drain current
0.8 V
8
1.0 V
4
1.0 V
8
4
VG1S = 0.5 V
VG2S = 0.5 V
0
1
2
3
Gate1 to source voltage
4
5
VG1S (V)
0
1
2
3
Gate2 to source voltage
4
5
VG2S (V)
3
Forward Transfer Admittance vs.
Gate1 to Source Voltage
VDS= 6 V
f = 1kHz
3V
24
2.5 V
18
2V
12
1.5 V
6
0.4
0.8
1.2
1.6
2
Gate1 to source voltage VG1S (V)
30
20
0
Noise Figure vs. Drain Current
VDS= 6 V
VG2S = 3V
f = 200MHz
4
3
2
1
0
4
8
12
16
Drain current I D (mA)
20
4
8
12
16
Drain current I D (mA)
20
Power Gain vs. Drain to Source Voltage
50
Power gain PG (dB)
NF (dB)
40
10
1V
5
Noise figure
VDS= 6 V
VG2S = 3V
f = 200MHz
VG2S = 0.5 V
0
4
Power Gain vs. Drain Current
50
30
Power gain PG (dB)
Forward transfer admittance |yfs| (mS)
3SK317
VG2S= 3V
I D = 10mA
f = 200MHz
40
30
20
10
0
2
4
6
8
Drain to source voltage VDS (V)
10
3SK317
20
VG2S = 3V
I D = 10mA
f = 200MHz
3
2
1
0
2
4
6
8
Drain to source voltage VDS
NF (dB)
Noise figure
12
8
0
10
VDS = 6V
VG2S = 3V
f = 900MHz
4
(V)
8
12
16
20
Drain current I D (mA)
Noise Figure vs. Drain Current
Power Gain vs. Drain to Source Voltage
20
4
16
3
2
VDS = 6V
VG2S = 3V
f = 900MHz
1
0
16
4
Power gain PG (dB)
Noise figure NF (dB)
4
5
Power Gain vs. Drain Current
Noise Figure vs. Drain to Source Voltage
Power gain PG (dB)
5
4
8
12
16
Drain current I D (mA)
20
12
8
VG2S = 3V
I D = 10mA
f = 900MHz
4
0
2
4
6
Drain to source voltage
8
VDS
10
(V)
5
3SK317
5
NF (dB)
VG2S = 3V
I D = 10mA
f = 900MHz
8
6
4
2
2
4
6
8
Drain to source voltage VDS
NF (dB)
Noise figure
4
6
10
(V)
Noise Figure vs. Drain to Source Voltage
VG2S = 3V
I D = 10mA
f = 60MHz
3
2
1
0
VDS = 6V
VG2S = 3V
f = 60MHz
4
3
2
1
0
5
Noise Figure vs. Drain Current
Noise Figure vs. Drain to Source Voltage
Noise figure
Noise figure
NF (dB)
10
2
4
6
Drain to source voltage
8
VDS
10
(V)
0
4
8
Drain current
12
16
I D (mA)
20
3SK317
Package Dimensions
Unit: mm
1.3
0.65 0.65
+ 0.1
+ 0.1
0.3 – 0.05
0.3 – 0.05
3
0.425
2.0 ±0.2
+ 0.1
0.16 – 0.06
1.25
2.1 ±0.3
2
0 ~ 0.1
1
4
+ 0.1
0.4 – 0.05
0.65
0.6
0.425
+ 0.1
0.3 – 0.05
0.9 ±0.1
0.2
1.25
Hitahi Code
EIAJ
JEDEC
CMPAK-4
SC-82AB
—
7
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.