HITACHI 4AK26

4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A
R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
12
1
G
2
D
S 3
5
G
4
D
S 6
8
G
9
D
S 7
12
G
11
D
S 10
34
56
78
9 10
1112
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
4AK26
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
32
A
10
A
28
W
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
2
Channel dissipation
Pch*
4
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
2
4AK26
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.045
0.06
Ω
ID = 5 A
VGS = 10 V*1
—
0.056
0.075
Ω
ID = 5 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
10
12
—
S
ID = 5 A
VDS = 10 V*1
Input capacitance
Ciss
—
1400
—
pF
VDS = 10 V
Output capacitance
Coss
—
720
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
220
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
15
—
ns
I D = 10 A
Rise time
tr
—
95
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
300
—
ns
RL = 3 Ω
Fall time
tf
—
170
—
ns
Body to drain diode forward
voltage
VDF
—
1.05
—
V
I F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
110
—
µs
I F = 10 A, VGS = 0,
dIF/dt = 50 A/µs
Note:
1. Pulse Test
3
4AK26
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
4
2 Device Operation
1 Device Operation
3
2
1
25
50
75 100 125 150
Ambient Temperature Ta (°C)
0
Pch (W)
5
Condition : Channel dissipation of
each die is idetical
Maximum Channel Dissipation Curve
30
Channel Dissipation
Channel Dissipation
Pch (W)
6
Condition : Channel dissipation of
each die is idetical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
20
10
0
25
50
75 100 125
Case Temperature Tc (°C)
Typical Output Characteristics
Drain Current ID (A)
40
10 V
8V
6V
Typical Transfer Characteristics
50
75°C
4.5 V
40
4.0 V
Pulse Test
30
3.5 V
20
3.0 V
10
Drain Current ID (A)
50
150
VDS = 10 V
Pulse Test
TC= 25°C
–25°C
30
20
10
VGS = 2.5 V
0
4
6
2
4
8
10
Drain to Source Voltage VDS (V)
0
3
1
2
4
Gate to Source Voltage VGS (V)
5
4AK26
Drain to Source Saturation Voltage
VDS (on) (V)
5
Static Drain to Source on Static Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
4
3
ID = 50 A
2
1
0
20 A
10 A
6
2
4
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
VGS = 4 V
0.1
0.05
10 V
0.02
0.01
0.005
1
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Pulse Test
ID = 20 A
0.08
0.06
10 A
VGS = 4 V
20 A 5 A
10 A
0.04
5A
0.02
0
–40
VGS = 10 V
80
0
40
120
Case Temperature TC (°C)
50
10
5
20
Drain Current ID (A)
100
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
0.10
2
160
100
50
VDS = 10 V
Pulse Test
–25°C
TC = 25°C
20
10
75°C
5
2
1
0.5
1.0
2
10 20
5
Drain Current ID (A)
50
5
4AK26
Body to Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
10,000
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
50
Ciss
1,000
Coss
300
Crss
100
30
20
10
0.5
VGS = 0
f = 1 MHz
3,000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1,000
10
2
1.0
5
10
20
Reverse Drain Current IDR (A)
0
50
Dynamic Input Characteristics
16
10 V
60
VGS
VDS
40
0
6
25 V
80
12
8
VDD = 50 V
25 V
10 V
4
ID = 25 A
20
40
60
80
Gate Charge Qg (nc)
0
100
1000
Switching Time t (ns)
VDD = 50 V
20
Switching Characteristics
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
100
10
20
30
40
50
Drain to Source Voltage VDS (V)
500
td (off)
200
tf
100
tr
50
VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %
•
•
20
10
0.5
td (on)
1.0
2
5
10
20
Drain Current ID (A)
50
4AK26
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
50
40
30
Pulse Test
10 V
15 V
20
5V
10
0
VGS = 0, –5 V
0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
7
Unit: mm
4.0 ± 0.2
0.85 ± 0.1
1
2
3
1.4
4
5
6
7
2.54
8
9
10
11
10.5 ± 0.5
2.7
10.0 ± 0.3
31.0 ± 0.3
1.5 ± 0.2
+0.1
0.55 –0.06
12
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-12
—
—
3.6 g
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