HITACHI 4AM16

4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A
P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A
• High speed switching
• High density mounting
• Suitable for H-brided motor driver
Outline
4AM16
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
VDSS
60
–60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
8
–8
A
32
–32
A
8
–8
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
28
W
Pch*
4.0
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
2
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Device Operation
2
4AM16
Electrical Characteristics (Ta = 25°C)
N channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
RDS(on)
—
0.13
0.17
Ω
I D = 4 A, VGS = 10 V*1
—
0.18
0.24
Ω
I D = 4 A, VGS = 4 V*1
resistance
Forward transfer admittance
|yfs|
3.5
5.5
—
S
ID = 4 A
VDS = 10 V*1
Input capacitance
Ciss
—
400
—
pF
VDS = 10 V
Output capacitance
Coss
—
220
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
60
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
5
—
ns
ID = 4 A
Rise time
tr
—
45
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
150
—
ns
RL = 7.5 Ω
Fall time
tf
—
85
—
ns
Body to drain diode forward
voltage
VDF
—
1.2
—
V
I F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
120
—
ns
I F = 8 A, VGS = 0,
diF/dt = 50 A/µs
Note:
1. Pulse Test
3
4AM16
Electrical Characteristics (Ta = 25°C)
P channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
RDS(on)
—
0.15
0.20
Ω
I D = –4 A, VGS = –10 V*1
—
0.20
0.27
Ω
I D = –4 A, VGS = –4 V*1
resistance
Forward transfer admittance
|yfs|
3.5
6.0
—
S
I D = –4 A
VDS = –10 V*1
Input capacitance
Ciss
—
900
—
pF
VDS = –10 V
Output capacitance
Coss
—
460
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
130
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
8
—
ns
I D = –4 A
Rise time
tr
—
50
—
ns
VGS = –10 V
Turn-off delay time
t d(off)
—
180
—
ns
RL = 7.5 Ω
Fall time
tf
—
95
—
ns
Body to drain diode forward
voltage
VDF
—
–1.2
—
V
I F = –8 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
185
—
ns
I F = –8 A, VGS = 0,
diF/dt = 50 A/µs
Note:
4
1. Pulse Test
4AM16
5
4AM16
6
4AM16
7
4AM16
8
4AM16
9
4AM16
10
4AM16
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part of this document without Hitachi’s permission.
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any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
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