6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol Nch Pch Unit Drain to source voltage VDSS 60 –60 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 7 –7 A Drain peak current ID(pulse)*1 28 –28 A Reverse drain current IDR 7 –7 A Channel dissipation Pch*2 42 W Channel dissipation Pch*2 4.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation 2 6AM14 Electrical Characteristics N Channel (Ta = 25°C) Item Symbol Drain to source breakdown voltage Min Typ Max Unit Test conditions V(BR)DS 60 S — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GS ±20 S — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 0.14 0.2 Ω ID = 4 A VGS = 4 V*1 — 0.22 0.5 Ω ID = 2 A VGS = 2.5 V*1 Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A VDS = 10 V*1 Input capacitance Ciss — 500 — pF VDS = 10 V Output capacitance Coss — 240 — pF VGS = 0 Reverse transfer capacitance Crss — 30 — pF f = 1 MHz Turn-on delay time td(on) — 15 — ns VGS = 10 V, ID = 4 A Rise time tr — 90 — ns RL = 7.5 Ω Turn-off delay time td(off) — 110 — ns Fall time tf — 250 — ns Body to drain diode forward voltage VDF — 1.0 — V IF = 7 A, VGS = 0 Body to drain diode reverse recovery time trr — 170 — ns IF = 7 A, VGS = 0 diF/dt = 50 A/µs Note: 1. Pulse Test 3 6AM14 Electrical Characteristics P Channel (Ta = 25°C) Item Symbol Drain to source breakdown voltage Min Typ Max Unit Test conditions V(BR)DS –60 S — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GS ±20 S — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA Static drain to source on state resistance RDS(on) — 0.12 0.16 Ω ID = –4 A VGS = –4 V*1 — 0.16 0.3 Ω ID = –2 A VGS = –2.5 V*1 Forward transfer admittance |yfs| 5.0 8.0 — S ID = –4 A VDS = –10 V*1 Input capacitance Ciss — 1450 — pF VDS = –10 V Output capacitance Coss — 590 — pF VGS = 0 Reverse transfer capacitance Crss — 120 — pF f = 1 MHz Turn-on delay time td(on) — 15 — ns VGS = –10 V, ID = –4 A Rise time tr — 75 — ns RL = 7.5 Ω Turn-off delay time td(off) — 240 — ns Fall time tf — 180 — ns Body to drain diode forward voltage VDF — –1.0 — V IF = –7 A, VGS = 0 Body to drain diode reverse recovery time trr — 210 — ns IF = –7 A, VGS = 0 diF/dt = 50 A/µs Note: 4 1. Pulse Test 6AM14 5 6AM14 6 6AM14 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7