HA16654A, HA16664A Series
PWM Controlled Switching Regulator
The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET
at high speed and high frequency. The standby current is limited to as small as 1.5 mA (typ). These
devices incorporate totem pole circuits suited for high-speed push-pull operation at the output stage,
accomplishing high-speed switching with rising time tr = 80 ns (typ) and falling time t f = 40 ns (typ) at 20
V swing.
Functions
•
•
•
•
•
•
Reference voltage circuit
Triangular waveform oscillation circuit
PWM comparator circuit
Low-input malfunction protection circuit
Output drive circuit
Soft start and quick shut down
Features
• High speed switching: tr = 80 ns, tf = 40 ns (typ) when use exernal driver circuit
• High frequency operation:
HA16654A (f = 100 kHz to 500 kHz)
HA16664A (f = 100 kHz to 200 kHz)
Low power dissipation : 2 mA max in standby state
• 5 V reference voltage
• Low-input malfunction protection (High threshold voltage: 10 V Typ, Low threshold voltage: 8 V
Typ)
• Adjustable dead band width
• Enlarged output pulse width control range (0 to 80%)
• Soft start and quick shut down functions
• Single output: totem pole
HA16654A, HA16664A Series
Ordering Information
Type No.
Operating Frequency
Package
HA16654APS
100 kHz to 500 kHz
DP-8
HA16654AFP
FP-14DA
HA16664APS
100 kHz to 200 kHz
DP-8
HA16664AFP
FP-14DA
Pin Arrangement
• HA16654APS,HA16664APS
CT 1
• HA16654AFP,HA16664AFP
8 EI
7 DB
RT 2
Vref 3
6 GND
VIN 4
5 OUT
NC 1
14 NC
NC 2
13 NC
CT 3
12 EI
RT 4
11 DB
Vref 5
10 GND
VIN 6
9 OUT
NC 7
8 NC
(Top view)
Table 1
(Top view)
Pin Function
Symbol
Pin Name
CT
Timing capacitor
RT
Timing resistor
Vref
Reference voltage
VIN
Input voltage
EI
Error input
DB
Dead band
GND
Ground
OUT
Driver output
2
HA16654A, HA16664A Series
Block Diagram
DB
EI
7
8
To under
voltage
lockout
RT
CT
2
1
Oscillator
To Vref
Vref
3
VIN
4
PWM
Comparator
VIN
To internal
circuitry
Reference
Regulator
Under Voltage
Lockout
(Hysteresis Type)
5
OUT
6
GND
Output Stage
ERROR
INPUT
DB
CT
OUT
Figure 1 Waveform Timing
3
HA16654A, HA16664A Series
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Power supply voltage
VIN
+40
V
Collector current (Push-pull)
IO
20
mA
Comparator input voltage
VCOM
Vref + 0.3
V
RT input current
I RT
1
mA
Power dissipation
PT
680
mW
Operation temperature range
Topr
–20 to +85
°C
Storage temperature range
Tstg
–55 to 125
°C
Notes
1, 2
Notes: 1. Ta ≤ 45°C, if Ta > 45°C, derate by 8.3 mW/°C
2. Tjmax = θj–a • Pcmax + Ta (θj–a:Thermal resistance between junction and atmosphere at set
board use)
The wiring density and the material of the set board must be chosen for thermal conductance of
efficacy board.
Electrical Characteristics
HA16654APS/AFP (Ta = 25°C, VIN = 20 V, CT = 220 pF, RT = 27 kΩ at f 500 kHz)
Voltage Reference
Item
Symbol
Min
Typ
Max
Unit
Output voltage
Vref
4.75
5.00
5.25
V
Line regulation
Line
—
—
100
mV
VIN = 7.3 to 11 V
—
10
25
mV
VIN = 11 to 40 V
I O = 0 to 10 mA
Load regulation
Load
—
5
16
mV
Temperature stability
VRTC
—
–26
—
ppm/°C
Short circuit current
I OS
10
35
—
mA
4
Test Condition
Vref = 0 V
HA16654A, HA16664A Series
Oscillator
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Maximum frequency
f max
500
—
—
kHz
CT = 220 pF
Minimum frequency
f min
—
—
100
kHz
CT = 560 pF
Initial accuracy
f dev
—
—
±10
%
Voltage stability
f av
—
–0.02
±1.0
kHz/V
VIN = 11 to 40 V
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Maximum duty cycle
Du
80
—
—
%
Duty cycle accuracy
Ddev
—
±1
±6
%
R1 = 13 kΩ, R2 = 39 kΩ
Input bias current
IB
—
—
2.0
µA
VE1 = 4 V, VDB = 0 V or
VE1 = 0 V, VDB = 4 V
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Sink current at Vin low
I OS (Low)
0.6
1.5
—
mA
VIN = 6 V, VOUT = 0.4 V
Output low level
VOL
—
0.86
1.4
V
I O (sink) = 10 mA
Output high level
VOH
VIN – 2.2 —
—
V
I O (source) = 10 mA
Output rising time
tr
—
80
150
ns
Figure 3
Output falling time
tf
—
40
100
ns
Figure 3
High level threshold
VTHH
9
10
11
V
UVL characteristics
Low level threshold
VTHL
7.3
8
9
V
UVL characteristics
Hysteresis width
VHRS
1.5
2.0
2.5
V
UVL characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Standby current
I CCS
—
1.5
2.0
mA
Figure 2
Operation current
VCCL
5.0
9.0
13.0
mA
R1 = 13 kΩ, R2 = 29 kΩ,
VIN = 20 V
Figure 2
PWM
Output Driver
Total Current
5
HA16654A, HA16664A Series
A
13 k Ω R1 27 k Ω
EI
DB
RT
39 k Ω R2
Dummy Load
(MOS FET)
Vref VIN
OUT
I CCL
2SD667
15 Ω
I IN
I CCS
2SB647
G
GND
VIN
2,200 pF
220 pF
20
VIN
h FE of 2SD667 and 2SD647 is defined as 60 min and 200 max
Figure 2 ICCS • ICCL Measurement Circuit
VIN
80%
2SD667
Output
OUT
2SB647
15 Ω
20%
tr
GND
tf
2,200 pF
Dummy Load
(MOS FET)
Figure 3 t r , tf Measurement Circuit
HA16664APS/AFP (Ta = 25°C, VIN = 20 V, CT = 560 pF, RT = 82 kΩ at f 100 kHz)
Voltage Reference
Item
Symbol
Min
Typ
Max
Unit
Output voltage
Vref
4.75
5.00
5.25
V
Line regulation
Line
—
—
100
mV
VIN = 7.3 to 11 V
—
10
25
mV
VIN = 11 to 40 V
I O = 0 to 10 mA
Load regulation
Load
—
5
16
mV
Temperature stability
VRTC
—
–26
—
ppm/°C
Short circuit current
I OS
10
35
—
mA
6
Test Condition
Vref = 0 V
HA16654A, HA16664A Series
Oscillator
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Maximum frequency
f max
200
—
—
kHz
CT = 220 pF
Minimum frequency
f min
—
—
100
kHz
CT = 560 pF
Initial accuracy
f dev
—
—
±10
%
Voltage stability
f av
—
–0.02
±1.0
kHz/V
VIN = 11 to 40 V
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Maximum duty cycle
Du
80
—
—
%
Duty cycle accuracy
Ddev
—
±1.0
±6
%
R1 = 11 kΩ, R2 = 39 kΩ
Input bias current
IB
—
—
2.0
µA
VEI = 4 V, VDB = 0 V or
VEI = 0 V, VDB = 4 V
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Sink current at Vin low
I OS (Low)
1.0
1.5
—
mA
VIN = 6 V, VOUT = 0.4 V
Output low level
VOL
—
0.86
1.4
V
I O (sink) = 10 mA
Output high level
VOH
VIN – 2.2 —
—
V
I O (source) = 10 mA
Output rising time
tr
—
80
300
ns
Figure 5
Output falling time
tf
—
40
200
ns
Figure 5
High level threshold
VTHH
9
10
11
V
UVL characteristics
Low level threshold
VTHL
7.3
8
9
V
UVL characteristics
Hysteresis width
VHRS
1.5
2.0
2.5
V
UVL characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Standby current
I CCS
—
1.5
2.0
mA
Figure 4
Operation current
VCCL
3.0
5.0
7.0
mA
R1 = 11 kΩ, R2 = 39 kΩ,
VIN = 20 V
Figure 4
PWM Comparator
Output Driver
Total Current
7
HA16654A, HA16664A Series
A
11 k Ω R1 27 k Ω
EI
DB
RT
39 k Ω R2
Dummy Load
(MOS FET)
Vref VIN
OUT
I CCL
2SD667
15 Ω
I IN
I CCS
2SB647
G
GND
VIN
2,200 pF
220 pF
20
VIN
h FE of 2SD667 and 2SD647 is defined as 60 min and 200 max
Figure 4 ICCS • ICCL Measurement Circuit
VIN
80%
2SD667
Output
OUT
2SB647
GND
15 Ω
20%
tr
2,200 pF
Dummy Load
(MOS FET)
Figure 5 t r • tf Measurement Circuit
8
tf
HA16654A, HA16664A Series
Characteristic Curves
Vref Rise Characteristics
Vref Output Voltage vs. Temperature
6.0
Ref Output Voltage Vref (V)
Ref Output Voltage Vref (V)
5.10
5.00
4.90
4.80
–30
0
50
Ta = 25°C
5.0
4.0
3.0
2.0
1.0
0
100
10
Ambient Temperature Ta (°C)
Quick Shutdown Time vs. Soft Start Capacitance
40
Soft Start Time vs. Soft Start Capacitance
Ta = 25°C
Ta = 25°C
20
Soft Start Time (sec)
Quick Shutdown Time (ms)
30
25
25
15
10
Vref
HA16654A
13
or
HA16664A
5
0
20
Input Voltage VIN (V)
D.B
20
40
60
kΩ
CS
20
15
10
Vref
HA16654A
13
or
HA16664A
5
kΩ
D.B
39 kΩ
39 kΩ
80
Soft Start Capacitance C S ( µ F)
100
0
20
40
60
CS
80
100
Soft Start Capacitance C S ( µ F)
9
HA16654A, HA16664A Series
Pulse Duty Cycle vs.
Dead Band Voltage in PWM Comparator (HA16654A)
100
90
f ≅ 300 kHz
70
60
f ≅ 500 kHz
f ≅ 100 kHz
50
40
30
60
50
30
10
10
0.8
0.9
0
0.6
0.7
0.8
0.9
Dead Band Voltage (V)
Dead Band Voltage (V)
∆f/f vs. Ambient Temperature (HA16654A)
∆f/f vs. Ambient Temperature (HA16664A)
+10
f ≅ 500 kHz
RT = 27 k Ω
CT = 220 pF
f ≅ 100 kHz
RT = 150 kΩ
CT = 330 pF
)
(
∆f/f (%)
(
0
f ≅ 100 kHz
RT = 150 kΩ
CT = 330 pF
(
)
–10
–20
–20
f ≅ 200 kHz
40
20
0.7
f ≅ 100 kHz
70
20
0.6
VIN = 20 V
80
Pulse Duty Cycle (%)
Pulse Duty Cycle (%)
80
+10
∆f/f (%)
90
VIN = 20 V
0
0
20
f ≅ 300 kHz
kΩ
( RCTT == 56
220 pF)
40
60
Ambient Temperature Ta (°C)
10
Pulse Duty Cycle vs.
Dead Band Voltage in PWM Comparator (HA16664A)
100
0
f ≅ 200 kHz
kΩ
( RCTT == 95
220 pF)
–10
80
)
–20
–20
0
20
40
60
Ambient Temperature Ta (°C)
80
HA16654A, HA16664A Series
∆ton/ton vs. Ambient Temperature (HA16654A)
Pulse Duty Cycle vs. Ambient Temperature (HA16654A)
Pulse Duty Cycle (%)
pF
(CRTT == 330
150 k Ω)
f ≅ 500 kHz
f ≅ 100 kHz
50
40
+10
∆ton/ton (%)
pF
(CRTT == 220
27 k Ω )
60
pF
(CRTT == 220
27 k Ω )
f ≅ 500 kHz
0
pF
(CRTT == 330
150 k Ω)
f ≅ 100 kHz
–10
–20
0
20
40
60
80
Ambient Temperature Ta (°C)
30
–20
0
20
40
60
80
Ambient Temperature Ta (°C)
∆ton/ton vs. Ambient Temperature (HA16664A)
Pulse Duty Cycle vs. Ambient Temperature (HA16664A)
+10
50
(
40
CT = 330 pF
RT = 150 k Ω
f ≅ 100 kHz
)
pF
(CRTT == 220
95 k Ω )
f ≅ 200 kHz
∆ton/ton (%)
Pulse Duty Cycle (%)
60
pF
(CRTT == 330
150 k Ω)
pF
(CRTT == 220
95 k Ω )
f ≅ 100 kHz
f ≅ 200 kHz
0
–10
–20
0
20
40
60
80
Ambient Temperature Ta (°C)
30
–20
0
20
40
60
80
Ambient Temperature Ta (°C)
11
HA16654A, HA16664A Series
OSC Frequency vs. Timing Resistor (HA16654A)
OSC Frequency vs. Timing Resistor (HA16664A)
200 k
CT =220 pF
Osc Frequency (Hz)
Osc Frequency (Hz)
500 k
CT = 560 pF
200 k
100 k
10 k
20 k
50 k
100 k
200 k
CT = 220 pF
CT = 560 pF
150 k
100 k
10 k
20 k
Timing Resistor RT (k Ω)
50 k
100 k
200 k
Timing Resistor RT ( Ω)
Formula for the oscillation frequency f
f = 1 / [ {CT (RT + 1 × 103)(a ⋅ RT + b) / (Vref − VBE)} + 100 × 10−9]
CT (pF)
220
560
a
a
−4
1.3
−6
1.4
b
b
−2.30 × 10
−6
−8.37 × 10
−6
Also,
f ≈ 4.35 / (CT ⋅ RT)
1.2
b
The following table show empirical values of
a and b for different values of CT.
−2
a (10−6)
CT : Timing capacitor (F)
RT : Timing resistor (Ω)
Vref : Reference voltage 5.0 (V) (Typ)
VBE : Base-emitter voltage 0.65 (V) (Typ)
1.247
−8
1.5
1.575
−10
200
1.6
300
400 500 600
CT (pF)
12
HA16654A, HA16664A Series
VIN Bias Point
HA16654A
(f ≅ 100 kHz)
Ta = 25°C
Ta = 25°C
10
Quick shutdown
area
8
I IN (mA)
I IN (mA)
(f ≅ 500 kHz)
Back up supply voltage
10
8
HA16664A
Soft start area
6
4
4
1/RIN
2
8 10
20
Soft start area 1/RIN
2
Low input
malfunction prevention area
0
6
Back up supply voltage
Quick shutdown
area
30
40
0
Va
Low input
malfunction prevention area
8 10
VIN (V)
20
30
40
Va
VIN (V)
Primary Control Forward Converter System
Soft Start Capacitor
AC
VB
0.47 µ F
R1
R.F.I
Filter
RIN
R2
VOUT
CT
RT
OUT
V IN
RT
CT
220 pF
(330 pF)
GND
HA16654A
(HA16664A)
+
Vref
Dead
Band
Error
Input
13 k Ω 39 k Ω
(11 k Ω)
D667
B647
Power MOS FET
HA17431
+
27 kΩ (150 k Ω)
51 kΩ
13
HA16654A, HA16664A Series
Package Dimensions
Unit: mm
6.3
7.4 Max
9.6
10.6 Max
8
5
1
0.89
4
1.3
0.1 Min
7.62
2.54 Min 5.06 Max
1.27 Max
+ 0.10
0.25 – 0.05
0.48 ± 0.10
2.54 ± 0.25
0° – 15°
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DP-8
Conforms
Conforms
0.54 g
Unit: mm
10.06
10.5 Max
8
5.5
14
1
0.10 ± 0.10
1.42 Max
1.27
*0.42 ± 0.08
0.40 ± 0.06
*0.22 ± 0.05
0.20 ± 0.04
2.20 Max
7
+ 0.20
7.80 – 0.30
1.15
0° – 8°
0.70 ± 0.20
0.15
0.12 M
*Dimension including the plating thickness
Base material dimension
14
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
FP-14DA
—
Conforms
0.23 g
HA16654A, HA16664A Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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15