HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency and high output power Package Type • HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr –20 to +60 °C Storage temperature Tstg –40 to +90 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 40 — — mW IF = 200 mA Peak wavelength λp 840 870 900 nm IF = 200 mA Spectral width ∆λ — 50 60 nm IF = 200 mA Forward voltage VF — — 2.5 V IF = 200 mA Reverse current IR — — 100 µA VR = 3 V Capacitance Ct — 30 — pF VR = 0 V, f = 1 MHz Rise time tr — 10 — ns IF = 50 mA Fall time tf — 10 — ns IF = 50 mA Rev.1, Jan. 2003, page 2 of 6 HE8812SG Typical Characteristic Curves Forward Current vs. Forward Voltage 60 250 50 40 TC = −20°C 0°C 25°C 40°C 60°C 30 20 10 Forward current, IF (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 200 150 TC = −20°C 100 50 0 0 50 100 150 200 250 Forward current, IF (mA) 0 0.5 1.0 1.5 2.0 Forward voltage, VF (V) Spectral Distribution Pulse Response 100 TC = 25°C 80 60 40 2.5 Current pulse TC = 25°C Relative intensity Relative radiation intensity (%) 25°C 60°C Optical pulse 20 0 −40 −20 20 40 λp Wavelength, λ (nm) 20 ns/div. Rev.1, Jan. 2003, page 3 of 6 HE8812SG 30 TC = 25°C θ (d eg .) Radiation Pattern 0 100 An g le, 80 60 60 40 20 90 100 80 60 40 20 0 Relative radiation intensity (%) Rev.1, Jan. 2003, page 4 of 6 20 40 60 Angle, θ (deg.) 80 0 Relative radiation intensity (%) Typical Characteristic Curves (cont) HE8812SG Package Dimensions As of July, 2002 2 Ð φ 0.45 ± 0.1 1 14 ± 2 0.55 ± 0.2 2.7 ± 0.2 φ 5.4 ± 0.2 φ 4.65 ± 0.2 φ 4.0 ± 0.2 0.65 ± 0.2 Unit: mm 2 2.54 ± 0.35 (2 – φ 1.05) 2 0 1. ± 0. 0 1. ± 2 0. 45˚ ±5 ˚ OPJ Code JEDEC JEITA Mass (reference value) IR/SG1 — — 0.25 g Rev.1, Jan. 2003, page 5 of 6 HE8812SG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Opto Device Business Unit Opnext Japan, Inc. 190 Kashiwagi, Komoro-shi, Nagano 384-8511, Japan Tel: (0267) 22-4111 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://japan.opnext.com/optodevice/ http://www.opnext.com/optodevice/ Copyright © Opnext Japan, Inc., 2003. All rights reserved. Printed in Japan. Colophon 0.0 Rev.1, Jan. 2003, page 6 of 6