HL6738MG Visible High Power Laser Diode ADE-208-601B (Z) 3rd Edition May 1998 Description The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical equipment. Hermetic sealing of the small package (φ 5.6 mm) assures high reliability. Application • Optical disc memories • Optical equipment Features • • • • High output power Visible light output Small package Low astigmatism : 35 mW (CW) : λp = 680 to 695 nm : φ 5.6 mm : 6 µm Typ (PO = 5 mW) Package Type • HL6738MG: MG Internal Circuit 1 3 PD LD 2 HL6738MG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 35 mW Pulse optical output power PO (pulse) 50 * mW Laser diode reverse voltage VR 2 V Photo diode reverse voltage VR (PD) 30 V Operating temperature Topr –10 to +70 °C Storage temperature Tstg –40 to +85 °C (LD) Note: Pulse condition : Pulse width = 100 ns, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 35 — — mW Kink free * Pluse optical output power PO(pulse) 50 — — mW Kink free * Threshold current Ith 30 45 70 mA — Operating voltage VOP 2.1 2.5 2.8 V PO = 30 mW Slope efficiency ηs 0.5 0.7 0.9 mW/mA 18(mW) / (I(24mW) – I (6mW)) Lasing wavelength λp 680 690 695 nm PO = 30 mW Beam divergence parallel θ// 7 8.5 10.5 deg. PO = 30 mW Beam divergence parpendicular to the junction θ⊥ 17 19 23 deg. PO = 30 mW Monitor current IS 0.02 0.1 0.45 mA PO = 30 mW, VR (PD) = 5 V Asitgmatism AS — 6 — µm PO = 5 mW, NA = 0.55 to the junction Note: Kink free is confirmed at the temperature of 25°C. 2 HL6738FM Curve Characteristics Monitor Current IS (mA) Optical Output Power PO (mW) Optical Output Power vs. Forward Current 50 TC = 25°C TC = 60°C TC = 0°C TC = 70°C 40 30 20 10 0 0 40 80 120 160 Monitor Current vs. Optical Output Power 0.5 VR (PD) = 5V TC = 25°C 0.4 0.3 0.2 0.1 0 200 0 30 40 50 Threshold Current vs. Case Temperature 100 Slope Efficiency vs. Case Temperature Threshold Current Ith (mA) 1.0 Slope Efficiency ηS (mW/mA) 20 Optical Output Power PO (mW) Forward Current IF (mA) 0.8 0.6 0.4 0.2 0 10 0 10 20 30 40 50 60 70 Case Temperature TC (°C) 80 10 0 10 20 30 40 50 60 70 80 Case Temperature TC (°C) 3 HL6738MG Lasing Wavelength vs. Case Temperature Monitor Current vs. Case Temperature 705 PO = 30mW VR (PD) = 5V 0.8 0.6 0.4 0.2 0 0 PO = 30mW Lasing Wavelength λp (nm) Monitor Current IS (mA) 1.0 10 20 30 40 50 60 700 695 690 685 680 70 80 0 Case Temperature TC (°C) Polarization Ratio vs. Optical Output Power 1000 TC = 25°C NA = 0.55 800 PO = 30mW Polarization Ratio Relative Intensity 80 Case Temperature TC (°C) Lasing Spectrum TC = 25°C 10 20 30 40 50 60 70 PO = 20mW PO = 10mW 600 400 200 PO = 5mW 0 685 690 Lasing Wavelength λp (nm) 4 695 0 10 20 30 40 Optical Output Power PO (mW) 50 HL6738FM Astigmatism vs. Optical Output Power Far Field Pattern 10 1.0 TC = 25°C NA = 0.55 Relative Intensity 0.8 Perpendicular 0.6 0.4 Parallel Astigmatism AS (µm) PO = 30mW TC = 25°C 0.2 0 −40 −30 −20 −10 0 8 6 4 2 0 10 20 30 40 0 10 20 30 Angle θ (deg) Frequency Response Forward N = 10pcs judgement ∆IO ≤ 10% Gain (dB) Survival Rate (%) 80 10M 100M Frequency (Hz) 50 Electrostatic Destruction (MILstandard) 100 3dB/div PO = 3mW 1M 40 Optical Output Power PO (mW) 1G 3G 60 40 20 0 0 1 2 3 4 Applied Voltage (kV) 5 HL6738MG Characteristics Distribution 1000 1000 Min : 40.2 Max: 57.9 Typ : 45.8 N : 1400pcs 800 800 N (pcs) N (pcs) 600 400 600 400 200 200 0 30 40 50 60 70 0 70 80 1000 800 Min : 0.560 Max : 0.848 Typ : 0.712 N : 1400pcs 100 110 120 600 400 Po=30mW VR(PD)=5V 800 N (pcs) N (pcs) 90 1000 18mW I(24mW)−I(6mW) Min : 0.049 Max : 0.178 Typ : 0.118 N : 1400pcs 600 400 200 200 0.6 0.7 0.8 0.9 Slope Efficiency ηs (mW/mA) 6 80 Operating Current IOP (mA) Threshold Current Ith (mA) 0 0.5 Min : 80.1 Max: 105.0 Typ : 88.0 N : 1400pcs PO = 30mW 1.0 0 0 0.1 0.2 0.3 0.4 Monitor Current IS (mA) 0.5 HL6738FM 1000 1000 PO = 30mW PO = 30mW 800 Min : 7.6 Max : 9.9 Typ : 8.4 N : 1400pcs 600 400 400 200 200 0 Min : 18.0 Max : 21.7 Typ : 18.8 N : 1400pcs 600 N (pcs) N (pcs) 800 7 8 9 10 11 0 16 12 18 Parallel θ// (deg) 24 26 1000 PO = 30mW 800 Min : 2.36 Max : 2.74 Typ : 2.50 N : 1400pcs 600 PO = 30mW 800 N (pcs) N (pcs) 22 Perpendicular θ⊥ (deg) 1000 400 200 0 20 600 Min : 684.8 Max: 694.0 Typ : 691.5 N : 1400pcs 400 200 2 2.2 2.4 2.6 2.8 Operating Voltage VOP (V) 3 0 680 690 700 Lasing Wavelength λp (nm) 7 HL6738MG Package Dimensions Unit: mm 0.4 +0.1 −0 φ 5.6 +0 −0.025 1.0 ± 0.1 (90°) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 − φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) 8 LD/MG 0.3 g HL6738FM Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Hitachi Europe Ltd. 16 Collyer Quay #20-00 Unit 706, North Tower, Electronic Components Div. World Finance Centre, Northern Europe Headquarters Hitachi Tower Harbour City, Canton Road Singapore 049318 Whitebrook Park Tsim Sha Tsui, Kowloon Tel: 535-2100 Lower Cookham Road Hong Kong Fax: 535-1533 Maidenhead Tel: 27359218 Berkshire SL6 8YA Fax: 27306071 United Kingdom Tel: 01628-585000 Fax: 01628-585160 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 9