HRU0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-450A (Z) Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRU0103A S1 URP Outline Cathode mark Mark 1 S1 2 1. Cathode 2. Anode HRU0103A Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Repetitive peak reverse voltage V Average rectified current I o*1 *2 Value Unit 30 V 100 mA 3 A Non-Repetitive peak forward surge current IFSM Junction temperature Tj 125 °C Storage temperature Tstg -55Å`+125 °C Note Note 1. See from Fig.3 to Fig.5 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V I F = 100 mA Reverse current IR — — 50 µA VR = 30V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note 1. Polyimide board 3.0 1.5 0.8 20hx15wx0.8t Unit: mm 1.5 2 HRU0103A Main Characteristic 10 1.0 -2 Pulse test Pulse test -1 10 Ta=75°C 10 -2 10 10 10 Reverse current I R (A) Forward current I F (A) 10 Ta=25°C -3 -4 -4 Ta=75°C 10 -6 -5 Ta=25°C 10 -5 10 10 -3 -6 -7 0 0.2 0.6 0.4 0.8 10 0 1.0 10 30 20 40 50 Reverse voltage VR (V) Forward voltage VF (V) Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage 0.06 0.10 Forward power dissipation Pd (W) 0.08 t T t D= \ T D=1/6 Tj =25°C Sin( ˘=180°) D=1/3 D=1/2 DC 0.06 0.04 0.02 0 Reverse power dissipation Pd (W) 0V 0A t 0.05 T t D= \ T Tj =125°C D=5/6 D=2/3 0.04 D=1/2 0.03 Sin( ˘=180°) 0.02 0.01 0 0 0.02 0.04 0.06 0.08 0.10 0.12 Forward current I F (A) Fig.3 Forward power dissipation Vs. Forward current 0 10 20 30 40 Reverse voltage V R(V) Fig.4 Reverse power dissipation Vs. Reverse voltage 3 HRU0103A Main Characteristic 0.12 VR=VRRM/2 Tj =125°C Rth(j-a)=600°C/W Average forward current IO (A) 0.10 DC 0.08 D=1/2 Sin( ˘=180°) 0.06 0.04 D=1/3 D=1/6 0.02 0 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.5 Average forward current Vs. Ambient temperature 4 HRU0103A Package Dimensions Unit : mm 1.7±0.15 2.5±0.15 2 0.3±0.15 S1 1 1.25±0.15 Cathode Mark 0.9±0.15 0 ‘0.10 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) URP — — 0.004 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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