HITACHI HRW0203A

HRW0203A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-014C (Z)
Rev 3
Oct. 1997
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRW0203A
S5
MPAK
Outline
3
2
(Top View)
1
1 NC
2 Anode
3 Cathode
HRW0203A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
*1
RRM
Repetitive peak reverse
voltage
V
Average rectified current
I o*1
*2
Value
Unit
30
V
200
mA
2
A
Non-Repetitive peak
forward surge current
IFSM
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55Å`+125
°C
Note
Note
1. See from Fig.1 to Fig.5, with polyimide board
2. 50Hz sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
0.50
V
I F = 200 mA
Reverse current
IR
—
—
50
µA
VR = 30V
Capacitance
C
—
40
—
pF
VR = 0V, f = 1MHz
2
HRW0203A
Main Characteristic
1.0
Tj=25 °C
Tj=125 °C
Reverse current I R (A)
Forward current I F (A)
–2
–1
10
–2
10
–3
10
–4
–3
10
10
10
0.2
0
0.4
0.6
0.8
1.0
10
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
0.40
0A
t
T
0.15
t
D= \
T
D=1/6
Tj =25°C
D=1/3
Sin( ˘=180°)
D=1/2
DC
0.10
0.05
Reverse power dissipation Pd (W)
0.20
Forward power dissipation Pd (W)
2
Reverse voltage V R (V)
Forward voltage V F (V)
0
10
0V
t
0.30
0.05
0.10
Forward current
Fig3. Forward power dissipation
0.15
0.20
@ @IF @(A)
Vs. Forward current
T
t
D= \
T
D=2/3
Tj =125°C
D=1/2
0.20
Sin( ˘=180°)
0.10
0
0
D=5/6
0
5
10
15
20
25
30
Reverse voltage @ @VR @(V)
Fig4. Reverse power dissipation
Vs. Reverse voltage
3
HRW0203A
Main Characteristic
0.30
20hx15wx0.8t
D=
t
T
1.5
VR=VRRM/2, Tj =125°C
0.20
1.5
0.15
Unit: mm
Rth=360°C/W
0.10
D=1/3
D=1/6
0.05
0
0.8
t
T
1.5
Average rectified current
0.25
3.0
@Io (A)
0V
0
DC
sin
D=1/2
0
25
50
75 100 125 150
Ambient temperature Ta ( °C)
Fig.5 Average rectified current Vs. Ambient temperature
f=1MHz
Pulse test
Capacitance C (pF)
102
10
1.0
-1
10
1.0
Reverse voltage V R (V)
10
Fig.6 Capacitance Vs. Reverse voltage
4
HRW0203A
Package Dimensions
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Unit : mm
+ 0.10
0.16 – 0.06
0.3
2.8 +– 0.1
+ 0.2
– 0.6
2.8
2 Anode
3 Cathode
+ 0.2
1.9
1 NC
1.1 – 0.1
1
0.95
0 – 0.10
0.1
0.65 +– 0.3
2
0.95
0.3
S 5
1.5
3
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
MPAK(1)
—
SC-59A
0.011
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.