HSB278S Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1383 (Z) Rev.0 Mar. 2001 Features • Low forward voltage, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB278S S2 CMPAK Outline 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSB278S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V 200 mA 150 mA Non-Repetitive peak forward surge current 1 IFSM * * IFM * Peak forward current 2 2 2 Average rectified current IO * 30 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. 10 msec sine wave 1 pulse 2. Per one device. Electrical Characteristics (Ta = 25°C) *1 Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 — — 0.30 V I F = 1 mA VF2 — — 0.95 IR — — 700 nA VR = 10 V C — — 1.50 pF VR = 1 V, f = 1 MHz — 100 — — V C = 200 pF, RL = 0 Ω, Both forward and reverse direction 1 pulse. Reverse current Capacitance 1 ESD-Capability * Notes: 1. Per one device. 2. Failure criterion ; IR > 1.4 µA at V R = 10 V 2 I F = 30 mA HSB278S Main Characteristic 10−4 101 100 10−2 Reverse current IR (A) Forward current IF (A) 10−1 Ta = 75°C 10−3 Ta = 25°C 10−4 10−5 10−6 Ta = 75°C 10−5 10−6 Ta = 25°C 10−7 10−7 10−8 0 0.2 0.4 0.6 0.8 1.0 10−8 0 10 20 30 40 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSB278S Package Dimensions As of January, 2001 0.1 0.3 +– 0.05 1.3 ± 0.2 (0.2) (0.65) (0.65) 0.9 ± 0.1 0.1 0.3 +– 0.05 + 0.1 0.16 – 0.06 2.1 ± 0.3 0.1 0.3 +– 0.05 (0.425) 1.25 ± 0.1 2.0 ± 0.2 (0.425) Unit: mm 0 – 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 4 CMPAK — Conforms 0.006 g HSB278S Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 3.0 5