HITACHI HSB88WS

HSB88WS
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-026C (Z)
Rev. 3
Aug. 2000
Features
• Small ∆VF and ∆C.
• Good for surface mounting on printed circuit board.
• Each diode can be biased.
• Wideband operation.
Ordering Information
Type No.
Laser Mark
Package Code
HSB88WS

MOP
Pin Arrangemant
4
5
3
2
1
6
7
8
(Top view)
HSB88WS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
10
V
Average rectified current
IO *
15
mA
Power dissipation
Pd *
150
mW
Junction temperature
Tj
125
°C
Operation temperature
Topr
−40 to +85
°C
Storage temperature
Tstg
−55 to +125
°C
Note: 4 devices total
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
365

435
mV
IF = 1 mA
VF2
520

600
IR1


0.2
IR2


10
Reverse current
IF = 10 mA
µA
VR = 2 V
VR = 10 V


0.85
pF
VR = 0 V, f = 1 MHz
Capacitance deviation
1
∆C *


0.2
pF
VR = 0 V, f = 1 MHz
Forward voltage deviation
∆VF *


15
mV
IF = 10 mA

30


V
C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse.
Capacitance
C
2
ESD-Capability *
1
Notes: 1. Deviation between 4 devices in one package
2. Failure criterion ; IR > 0.4 µA at VR = 2 V
Rev.3, Aug. 2000, page 2 of 5
HSB88WS
Main Characteristic
10-2
10 -5
-3
10
10
Reverse current I R (A)
Forward current I F (A)
10 -4
-5
-6
10
-7
10
-8
10
10
10
10
-6
-7
-8
-9
10
-10
10
0
0.2
0.4
0.6
Forward voltage VF (V)
10
-9
0
2
4
6
8
10
Reverse voltage VR (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
Capacitance C (pF)
1.0
-1
10
10-2
-1
10
1.0
Reverse voltage VR (V)
10
Fig.3 Capacitance Vs. Reverse voltage
Rev.3, Aug. 2000, page 3 of 5
HSB88WS
Package Dimensions
2.8 +0.3
–0.6
(1.5)
0.65 +0.2
–0.3
(0.4)
(1.27)
(0.45)
0 - 0.1
(0.8)
(1.1)
(1.27)
(4.71)
(1.27)
0.65 +0.2
–0.3
(0 - 0.2)
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
Rev.3, Aug. 2000, page 4 of 5
MOP
—
—
0.020 g
HSB88WS
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.3, Aug. 2000, page 5 of 5