HITACHI HSM276S

HSM276S
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-039E (Z)
Rev 5
Jul 1998
Features
• High forward current, Low capacitance.
• HSM276S which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSM276S
C2
MPAK
Outline
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSM276S
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
3
V
Average rectified current
IO
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
3.0
—
—
V
I R = 1 mA
Reverse current
IR
—
—
50
µA
VR = 0.5V
Forward current
IF
35
—
—
mA
VF = 0.5V
Capacitance
C
—
—
0.90
pF
VR = 0.5V, f = 1 MHz
∆C
—
—
0.10
pF
VR = 0.5V, f = 1 MHz
—
30
—
—
V
C=200pF , Both forward and reverse
direction 1 pulse.
Capacitance deviation
*1
ESD-Capability
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
2
HSM276S
Main Characteristic
-2
-1
10
10
-2
-3
Reverse current I R (A)
Forward current I F (A)
10
-3
10
-4
10
-4
10
-5
10
-5
10
10
-6
0.8
0.4
0.6
0.2
Forward voltage VF (V)
0
1.0
Fig.1 Forward current Vs. Forward voltage
10
0
4.0
2.0
3.0
1.0
Reverse voltage VR (V)
5.0
Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
Capacitance C (pF)
10
1.0
-1
10
-1
10
1.0
Reverse voltage VR (V)
10
Fig.3 Capacitance Vs. Reverse voltage
3
HSM276S
Package Dimensions
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Unit : mm
+ 0.10
0.16 – 0.06
2
0.95
1
0.95
1.9
+ 0.2
– 0.6
2.8
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
1.1 – 0.1
+ 0.2
0.3
0.3
2.8 +– 0.1
4
0 – 0.10
0.1
0.65 +– 0.3
C 2
1.5
3
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
MPAK(1)
—
SC-59A
0.011
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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